AT29C010A-90TI Allicdata Electronics
Allicdata Part #:

AT29C010A-90TI-ND

Manufacturer Part#:

AT29C010A-90TI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 1M PARALLEL 32TSOP
More Detail: FLASH Memory IC 1Mb (128K x 8) Parallel 90ns 32-T...
DataSheet: AT29C010A-90TI datasheetAT29C010A-90TI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT29C010
Description

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The AT29C010A-90TI is a 128Kbit, 8-bit wide CMOS Electrically Erasable PROM (E2PROM) manufactured by Atmel. This E2PROM is in the form of a two-level metal high-density die that features a 128K x 8 bit organization with a fast enterprise cycle used in applications where frequent reprogramming and reconfiguration is required.

This E2PROM is typically used in various consumer applications such as cellular phones, satellite systems, car alarms, medical and general electronics, industrial control systems, data acquisition systems, video systems, etc. It is especially useful in applications where continuous updates, rapid interchangeable configurations and data storage is needed.

The AT29C010A-90TI can be used for single cycle read and write operations with typical access times of 90 ns and 105 ns respectively. It can be provided with an erase window of 2.5 volts and a read/write window of 4.5/5.5 volts. It has very low write current of 200 μA, which makes it very power efficient. It is available in both PDIP and PLCC packages.

The working principle of the AT29C010A-90TI is based on a floating gate technology. It works with two transistors; an N-channel MOSFET and a selection transistor. Data is \'written\' to the memory cells by using Fowler Nordheim tunneling to inject electrons onto the floating gate resulting in a trapped charge. When reading, the two transistors are used with the trapped charge to control a signal that is detected to represent a \'1\' or a \'0\'. The data bits are stored in a matrix of cells with each cell containing a different level of charge representing either 0 or 1.

The AT29C010A-90TI is a reliable and economical solution for various applications requiring data storage and reprogramming, as well as rapid interchangeable configurations. The fast cycle time, low power consumption and high reliability make it a great choice for most consumer, industrial and medical applications.

The specific data is subject to PDF, and the above content is for reference

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