AT29C020-10TC Allicdata Electronics
Allicdata Part #:

AT29C020-10TC-ND

Manufacturer Part#:

AT29C020-10TC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32TSOP
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 100ns 32-...
DataSheet: AT29C020-10TC datasheetAT29C020-10TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT29C020
Description

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Memory

The AT29C020-10TC is a 32K x 8-bit (256Kb) CMOS Nonvolatile Static RAM organized as 4K words by 8 bits. It is referred to as an EEPROM (Electrically Erasable Programmable Read Only Memory) since it is a battery-backed by a low power CMOS static RAM and has Electrically Erasable and Programmable features to recall information stored in its nonvolatile cells. The device is offered in both a standard (DIP) and surface mount packages that are SOIC and TSOP.

Compared to EPROM (Erasable Programmable Read Only Memory), EEPROM are much faster at erase and write operation. They are versatile and can be used in data logging, range finding and data transfer. EEPROM can store data without the need for any external power supply and as a result, they are used extensively in automotive, medical and industrial applications.

The AT29C020-10TC has a typical access time of 150ns (nanoseconds), a data retention of 30 years, a write cycle time of 3ms (milliseconds) and can operate in temperatures ranging from -40°C to +85°C.

Working Principle

The AT29C020-10TC device consists of a system of floating gate transistors. It uses what’s known as a Fowler-Nordheim tunneling process to apply electrons to each memory cell’s floating gate. The electrons accumulate as electrons tunnel through an oxide between the control gate and floating gate, and remain in the floating gate until the write operation is triggered again.

When the AT29C020-10TC is write enabled, electrons are passed through the N-channel to the floating gate. During the erase operation, a higher voltage is applied to the N-channel and the stored electrons are collected and passed back into the substrate. This process, depending on the cell design, will store or erase the cell.

Application Fields

The AT29C020-10TC is ideally suited for a number of applications, such as automotive, industrial, and medical. It is especially useful in locations where high-performance, high-speed, and low power operation are required such as in messaging systems and video cameras.

Its nonvolatile features provide fast retrieval of data even when the power has been disconnected, ensuring uninterrupted and seamless data operations. It also offers a wide range of features such as fast write times, low power consumption, and a data retention of 30 years.

The AT29C020-10TC is also used in medical applications such as medical implantable devices, data stores in remote patient monitoring systems, and medical data processing units due to its low power consumption and high-performance capability.

Conclusion

The AT29C020-10TC is an 8-bit, 32K x 8-bit (256Kb) CMOS, Nonvolatile Static RAM which is referred to as an EEPROM. It is used extensively in automotive, medical, and industrial applications due to its nonvolatile properties, low power consumption and fast access times. The AT29C020-10TC is ideally suited for a number of applications, such as automotive, industrial, and medical, and is especially useful in locations where high-performance, high-speed, and low power operation are required.

The specific data is subject to PDF, and the above content is for reference

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