Allicdata Part #: | AT29C1024-70TC-ND |
Manufacturer Part#: |
AT29C1024-70TC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 48TSOP |
More Detail: | FLASH Memory IC 1Mb (64K x 16) Parallel 70ns 48-T... |
DataSheet: | AT29C1024-70TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (64K x 16) |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | AT29C1024 |
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Memory technology is an essential part of the modern world. It plays an important role in many computing operations, from basic data storage to complex operations involving multiple processors and peripherals. One of the most popular forms of memory is the AT29C1024-70TC, also known as a CMOS EEPROM, or Electrically Erasable Programmable Read-Only Memory.
The AT29C1024-70TC is a specifically designed type of EEPROM that combines the benefits of both CMOS (Complementary Metal-Oxide Semiconductor) and EEPROM technologies. It is a low-cost, high-speed, easy to implement, and reliable form of memory. It has the ability to store up to 128 kilobits of data. This makes it suitable for a variety of application fields where data storage and retrieval is critical.
One of the key advantages of the AT29C1024-70TC is its low-power consumption. This makes it ideal for battery-powered devices such as smartphones and tablets. Its low-power design ensures that it doesn\'t experience any significant power loss even when operating under high-temperature and humidity conditions. This makes the AT29C1024-70TC well-suited for use in embedded systems, where applications must be able to run for long periods of time without draining a battery too quickly.
The AT29C1024-70TC uses a process of writing, reading, and programming data into the memory. This process is based on the charge punch programming mode. In this method, the data is written into the EEPROM cells by applying a positive electric charge through the various pins in the device. Once the charge punch programming mode is used to write data into the memory cells, the data can then be read or modified with the help of a controller or processor.
Another advantage of the AT29C1024-70TC is its high-speed programming and reading capability. This makes it suitable for use in applications where speed is a critical factor, such as booting an operating system. It also enables device designers to quickly and easily program their designs, leading to fast time-to-market. As a result, the AT29C1024-70TC has become increasingly popular in the memory industry, particularly for embedded applications.
The AT29C1024-70TC is a highly cost-effective form of memory and has found a variety of applications in the industry. It can be used for storing system BIOS code for PCs, embedded systems, and digital media players. Additionally, it can be used for secure storage of information, with its data encryption features allowing for secure storage of sensitive data. Because of its various benefits, the AT29C1024-70TC is the preferred choice for many devices and applications.
The AT29C1024-70TC is a highly useful form of memory, providing a range of features that make it suitable for a variety of application fields. Its low-power consumption and high-speed programming and read performance make it perfect for embedded designs where speed, reliability, and battery conservation are all key. Additionally, its data encryption capabilities allow for secure storage of sensitive data, making it a great choice for secure applications. As a result, the AT29C1024-70TC has become a popular choice for device and system designers looking for a reliable and cost-effective form of memory.
The specific data is subject to PDF, and the above content is for reference
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