AT29C1024-90JI Allicdata Electronics
Allicdata Part #:

AT29C1024-90JI-ND

Manufacturer Part#:

AT29C1024-90JI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 1M PARALLEL 44PLCC
More Detail: FLASH Memory IC 1Mb (64K x 16) Parallel 90ns 44-P...
DataSheet: AT29C1024-90JI datasheetAT29C1024-90JI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)
Base Part Number: AT29C1024
Description

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AT29C1024-90JI is a high density fast access complementary metal oxide semiconductor (CMOS) nonvolatile memory device, which belongs to the Memory category. The 4K bits of memory are organized as 2048 words of 16 bits each stored in the nonvolatile registers of this device. It also has a self-timed write cycle composed of 3 logic levels. It allows a basic cycle time of 8.3 microseconds (min) for single byte operations and 40 microseconds (min) for full register multiple-byte operations.

The application field of AT29C1024-90JI mainly covers industrial processing and control systems. Its wide range of features and low cost makes it suitable for applications such as data acquisition, factory automation, instrumentation, automotive systems, portable tooling, and process control systems. Its wide operating temperature range makes it suitable for automotive and extreme environment applications. Its fast access time, low power consumption, low cost, and wide operating temperature range make it suitable for industrial control applications.

The working principle of AT29C1024-90JI is based on the Complementary Metal-Oxide-Semiconductor (CMOS) technology. The memory cells of this device consist of dynamic MOSFET circuits, which are organized in an array. Data is stored in these memory cells as the state of a transistor, either ‘on’ for a ‘1’ bit or ‘off’ for a ‘0’ bit. When a voltage is applied to the gate of the transistors, it causes the drain voltage to either rise or fall, thus changing the value of the stored bit. This process is also known as ‘writing’, as in storing data.

Read operations in the AT29C1024-90JI are performed by applying a voltage to the gate electrode. The state of the drain voltage is then sensed to determine the value of the stored bit. This process is referred to as ‘reading’, as in retrieving data. In order to ensure that data is not lost or corrupted, the write operation must be performed correctly and the memory cells must be protected from any type of disturbance.

The AT29C1024-90JI features an ‘auto-read’ function, which allows for the automatic retrieval of data from the memory cells when the power is ON. This feature allows for the fast retrieval of data and helps reduce power consumption. Furthermore, the device includes circuitry that protects the memory from unintentional reads and writes, thus minimizing the loss of data.

In conclusion, AT29C1024-90JI is a memory device belonging to the Memory category. It is mainly used in industrial control and automation systems due to its wide operating temperature range, low power consumption, fast access time and low cost. The working principle of this device is based on a dynamic MOSFET array, and all read and write operations are protected in order to ensure data security.

The specific data is subject to PDF, and the above content is for reference

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