AT29LV512-12TU

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Memory

AT29LV512-12TU is a 512-Kbit (65,536 x 8-bits) non-volatile electrically erasable programmable read only memory (EEPROM), and provides advanced data protection, write protection and self-test capability. AT29LV512-12TU have good reliability, wide operating voltage range, and fast write and erasing time, it is widely used in consumer, industrial and automotive applications.

Application Field

The AT29LV512-12TU is a high performance non-volatile memory device, and its 512-Kbit (65,536 x 8-bits) configuration makes it a great fit in industrial, consumer, and automotive electronics. Any application requiring a reliable, fast, and low power non-volatile memory device should consider the AT29LV512-12TU. This EEPROM is also suitable for product development, software configuration, and system data storage, as it provides a fast write and erasing time. Additionally, it supports up to four levels of write protection and data encryption adjustment, making it the perfect solution for protecting applications from unauthorized access or tampering.

Working Principle

The AT29LV512-12TU uses a floating-gate technology to store data. In this technology, electrons are trapped on the isolated conductive gate. This isolated gate is said to "float" as it does not have any voltage bias. The electrons trapped on the isolated gate cause it to retain its charge for a significant amount of time. The EEPROM is connected to the voltages necessary to read and write data, allowing it to carry out these two operations.

To write data in the device, a specific bias is applied to the isolated gate. The amount of current passing through the isolated gate and the duration of the current determines the amount of electrons that are trapped in the gate. Once the correct number of electrons has accumulated in the gate, the data is "written" and can be permanently stored.

To read data in the device, a specific voltage bias is applied to the gate and the amount of current passing through the isolated gate is measured. By measuring the amount of current passing through the gate, the number of electrons present in the gate can be determined. This amount of electrons determines the logic state of the stored data.

The AT29LV512-12TU includes an integrated self-test feature. This feature is used to check the data stored in the device and detect errors or failures. The self-test feature analyzes both the data stored in the memories and the internal operation of the memory device to detect any issue.

The AT29LV512-12TU is a reliable, versatile, and cost-efficient non-volatile memory device with a wide range of applications. It features a quick write and data protection features to protect data from unauthorized access or tampering. Additionally, its fast write and erasing time and extended data retention make it a great fit for industrial, consumer, and automotive applications.

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