AT45DB161B-CI-2.5

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The AT45DB161B-CI-2.5 is a non-volatile memory, wide used in memory applications. It is a high-performance, low-power memory device with extreme reliability. Manufactured and produced by Atmel Corporation, AT45DB161B-CI-2.5 offers a wide range of features, including advanced flash technology that enables current and future memory applications to benefit from its higher density and performance.

The AT45DB161B-CI-2.5 uses an efficient data path that enables high-speed data transfer from the Flash media to the device’s external memory port. As a result, the AT45DB161B-CI-2.5 can be used effectively in high-performance embedded systems. The device includes a wide range of features, including advanced error correction, wear-leveling, fast throughput, and low-power operation. Additionally, it is capable of providing very fast data access times and good reliability.

AT45DB161B-CI-2.5 employs a dual-channel flash architecture to facilitate high data throughput. It utilizes a high-speed serial interface to enable fast data transfer from the Flash media to the device’s external memory port. This enables access times of less than 50 ns, making the AT45DB161B-CI-2.5 one of the fastest non-volatile memory devices available. Additionally, the device’s advanced wear-leveling algorithms ensure that data stored on the device is always accurately and securely stored.

The AT45DB161B-CI-2.5 is a very efficient memory device that can be used in industrial and embedded systems. Manufactured using Atmel’s advanced flash technology, the device is capable of high performance even at low power levels. The device also includes an on-chip error correction unit (ECU) to detect and correct any errors that may have been generated during data transfers to/from the device. This ensures data reliability and accuracy.

Both robust flash management and low-power operation are enabled by Atmel’s advanced Charge Trap Memory technology. This allows for the device to reach capacity, durability, and performance levels that are unmatched by other available memory devices. Additionally, AT45DB161B-CI-2.5 utilizes regular block erase commands to reduce flash wear and lengthen the lifetime of the device.

In conclusion, AT45DB161B-CI-2.5 is an efficient non-volatile memory device with high performance and excellent reliability and endurance. Its advanced technologies make it an ideal memory choice for industrial and embedded applications. It utilizes charge trap technology, which makes it capable of higher performance, better reliability, and lower power consumption compared to other available memory devices. Additionally, its dual-channel architecture and advanced wear-leveling algorithms allows for the data stored on it to be extremely reliable and secure.

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