AT45DB641E-SHN-T Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	64Mb (264 Bytes x 32K pages)
Clock Frequency:	85MHz
Write Cycle Time - Word, Page:	8µs, 5ms
Memory Interface:	SPI
Voltage - Supply:	1.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package:	8-SOIC

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Memory: AT45DB641E-SHN-T Application Field and Working Principle

AT45DB641E-SHN-T is a type of memory technology based on Flash memory. It is commonly used in memory applications due to its non-volatile nature and higher capacity at a lower cost. AT45DB641E-SHN-T offers the highest density and highest cost advantage for applications where high-speed write operations, endurance and flexibility of memory solutions is required. AT45DB641E-SHN-T is one of the most advanced and reliable memory solutions used in modern applications.AT45DB641E-SHN-T is an 8-bit-addressable NAND-type Flash memory. The device is organized as 4,194,304 × 8 bits. Each memory bank is arranged as 256 pages that are 1056 bytes each. This page size can be easily divided into 8 bytes (DataFlash) or 264 bytes (Main Flash). It offers flexible systems architecture and is commonly used in a variety of applications.AT45DB641E-SHN-T can be used in a wide range of embedded applications including automotive systems, portable consumer electronics, medical systems, industrial controllers, and secure internet of Things applications. It has been designed to optimize write speeds and maximize density to support multiple quality of service requirements. The chip is optimized for low-power consumption, low power mode operation and has low device utilization, making it suitable for low-end applications as well as high-end ones.AT45DB641E-SHN-T also supports an added feature of on-board error correction. The feature ensures a higher level of data integrity and makes the device ideal for embedded applications. The added feature of dual mode operation provides the flexibility to use the device in both asynchronous and synchronous modes.In terms of its working principle, AT45DB641E-SHN-T uses an Erase-Before-Write (EBW) process which allows user data to be changed without erasing all previously written data. The internal buffers of the chip can be configured to store code, which can then be executed. By using the integrated CPU, the device can be operated in data storage and data transferred mode. Additionally, external NAND Flash memory can be used to increase the total size of the device.At45db641e-shn-t also offers a wide variety of other features, such as sector protection, operating temperature range, voltage operation range, temperature, humidity and shock resistance, program and erase endurance, as well as multiple erase and program operations. This enhances its applicability for a wider range of applications, making it one of the most reliable memories and multi-purpose memories available in the market today.

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