ATSAMR21E17A-MF Allicdata Electronics

ATSAMR21E17A-MF RF/IF and RFID

Allicdata Part #:

1611-ATSAMR21E17A-MF-ND

Manufacturer Part#:

ATSAMR21E17A-MF

Price: $ 1.61
Product Category:

RF/IF and RFID

Manufacturer: Microchip Technology
Short Description: IC RF TXRX+MCU ISM>1GHZ 32-VFQFN
More Detail: IC RF TxRx + MCU 802.15.4, General ISM > 1GHz 2.4...
DataSheet: ATSAMR21E17A-MF datasheetATSAMR21E17A-MF Datasheet/PDF
Quantity: 2446
1 +: $ 1.46790
25 +: $ 1.34190
100 +: $ 1.26315
Stock 2446Can Ship Immediately
$ 1.61
Specifications
Power - Output: 4dBm
Package / Case: 32-VFQFN Exposed Pad
Operating Temperature: -40°C ~ 125°C
Current - Transmitting: 7.2mA ~ 13.8mA
Current - Receiving: 11.3mA ~ 11.8mA
Voltage - Supply: 1.8 V ~ 3.6 V
GPIO: 16
Serial Interfaces: I²C, SPI, UART, USART, USB
Memory Size: 128kB Flash, 16kB SRAM
Sensitivity: -99dBm
Series: SMART™ SAM R21
Data Rate (Max): 250kbps
Frequency: 2.4GHz
Modulation: O-QPSK
Protocol: --
RF Family/Standard: 802.15.4, General ISM > 1GHz
Type: TxRx + MCU
Part Status: Active
Packaging: Tray 
Description

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ATSAMR21E17A-MF is a transceiver integrated circuit (IC) designed for use in RF radio applications. It is part of a family of RF transceivers that are capable of operating at both very low frequency (VLF) and ultra high frequency (UHF) bands. The ATSAMR21E17A-MF is a two-channel transceiver solution, with one channel configured for operation at VLF and the other at UHF frequencies.

The ATSAMR21E17A-MF utilizes a high-speed frequency synthesizer and an integrated power amplifier to enable it to deliver stable performance in a wide variety of radio applications. The entire integrated circuit can be powered by a single 5V DC power supply, making it ideal for low-power applications, such as those found in battery-powered systems.

The ATSAMR21E17A-MF transceiver uses a dual-band architecture, utilizing both low-noise and medium-noise amplifiers to ensure excellent dynamic range across the RF operating frequency band. The integrated VLF and UHF transceiver channels come with a direct gate drive to the power amplifier, eliminating the need for any additional power source. A built-in RF switch also helps to reduce the amount of circuitry needed for multi-band operation.

The ATSAMR21E17A-MF transceiver also provides excellent receiver sensitivity, featuring a high-frequency gain range of up to 10dB. Additionally, the device features a temperature-compensated reference oscillator technology, allowing it to remain stable over temperature variations.

In addition to the receiver and transmitter functions, the ATSAMR21E17A-MF also contains multiple embedded processors for signal-processing functions, such as data encoding and decoding, data acquisition, multiplexing, and channel filtering. The device makes use ofTime Division Multiplexing (TDM) technology to enable simultaneous transmission and reception in different channels.

The ATSAMR21E17A-MF transceiver is highly suitable for applications such as wireless communication systems, sensor networks, remote access systems, military applications, and general-purpose communications. It is also compatible with various radio standards, including Bluetooth, Wi-Fi, and LTE. The ATSAMR21E17A-MF transceiver offers excellent performance in both low-bandwidth and high-bandwidth applications.

In conclusion, the ATSAMR21E17A-MF device is a versatile, cost-effective, and feature-rich RF transceiver solution. It is capable of delivering superior performance in a range of RF applications. Furthermore, the embedded processors, integrated power amplifier, and dual-band architecture make this solution an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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