| Allicdata Part #: | BA892-02VE6127-ND |
| Manufacturer Part#: |
BA 892-02V E6127 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | DIODE RF SW 35V 100MA SC-79 |
| More Detail: | RF Diode Standard - Single 35V 100mA PG-SC79-2 |
| DataSheet: |  BA 892-02V E6127 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard - Single |
| Voltage - Peak Reverse (Max): | 35V |
| Current - Max: | 100mA |
| Capacitance @ Vr, F: | 1.1pF @ 3V, 1MHz |
| Resistance @ If, F: | 500 mOhm @ 10mA, 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | SC-79, SOD-523 |
| Supplier Device Package: | PG-SC79-2 |
| Base Part Number: | BA892 |
Description
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BA 892-02V E6127 is an RF diode (radio frequency diode) commonly used in wireless communication products. It is a kind of variable capacitor diode, also known as varactor diode. Its application field involves mobile phone, broadcasting, data broadcasting, wireless communication, microwave communication, satellite communication and other wireless fields.
The working principle of BA 892-02V E6127 is based on the junction field effect of its semiconductor materials -- silicon. Silicon has the characteristics of high resistivity, low leakage current and low noise. It is possible to form a schottky barrier between the two oppositely charged zones (metal/silicon) of the junction field effect, forming a rectangular potential barrier. The potential barrier is composed of silicon body and doped silicon layer. The purpose of applying a reverse bias field is to reduce the so-called "capacitance" of the structure, reducing "leakage" in the RF circuit.
The reverse bias field is generated by the bias applied to a diode, which is connected between the anode and the cathode of the diode. The current flows through the diode, creating an electric field that can effectively reduce the "capacitance" of the structure, thus reducing the amount of "leakage" in the RF circuit.
The BA 892-02V E6127 RF diode is designed to work in the following operating conditions - a reverse bias voltage of up to 25 volts, a 100mA reverse current and a maximum operating temperature of 125°C. The diode is designed for use in a wide range of RF applications, for example mobile radios, satellite receivers, remote receivers, vehicle tracking systems, etc.
In conclusion, the BA 892-02V E6127 RF diode is a variable capacitor diode with excellent variable capacitance characteristics. Its application field involves mobile phones, broadcasting, data broadcasting, wireless communication, microwave communication, satellite communication and other wireless fields. Its working principle is based on the junction field effect of the silicon semiconductor. It is designed to work at up to 25 volts and has a range of applications.
The specific data is subject to PDF, and the above content is for reference
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