| Allicdata Part #: | BA892E6127-ND |
| Manufacturer Part#: |
BA 892 E6127 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | DIODE RF SW 35V 100MA SCD-80 |
| More Detail: | RF Diode Standard - Single 35V 100mA PG-SCD80-2 |
| DataSheet: |  BA 892 E6127 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard - Single |
| Voltage - Peak Reverse (Max): | 35V |
| Current - Max: | 100mA |
| Capacitance @ Vr, F: | 1.1pF @ 3V, 1MHz |
| Resistance @ If, F: | 500 mOhm @ 10mA, 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Package / Case: | SC-80 |
| Supplier Device Package: | PG-SCD80-2 |
| Base Part Number: | BA892 |
Description
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The BA 892 E6127 is a type of diode designed primarily for use in radio frequencies (RF). It is also known as a high-electron mobility transistor (HEMT). This type of diode is designed to be highly efficient in amplifying signals in the RF range, and is used in a variety of applications.
The BA 892 E6127 is a two-year hybrid diode. It has a gate, source and drain structure with a substrate layer. The gate is the input for the diode, and the other two layers act as the output. The gate of the diode is typically made of n-type semiconductor material, while the source and drain are typically composed of p-type material. This combination of n-type and p-type materials ensures that the diode is capable of amplifying electrical signals in the RF range.
The working principle of the BA 892 E6127 can be explained using the concept of electron mobility. Electron mobility is the ability of an electron to move from one layer to another in a device. In this case, the gate layer is composed of n-type semiconductor, while the source and drain are composed of p-type material. When an RF signal is applied to the gate, the electron mobility is enhanced, allowing the electrons to move to the source and drain region faster. This creates an amplifier effect that is highly efficient in amplifying signals in the RF range. This is why the BA 892 E6127 is often used in RF applications.
The BA 892 E6127 is widely used in RF applications, such as satellite and cellular communications, radio receivers, broadcast transmitters, and radar systems. In these applications, the diode is used to amplify small signals in the radio frequency band. The diode is also used in other applications such as low-noise amplifiers, signal conditioning, and signal processing. In addition, the diode is commonly used as a detector in Radio Astronomy and other fields.
The BA 892 E6127 is an excellent choice for a variety of RF applications. It is highly resistant to thermal shock, and is compatible with a wide range of circuit designs. The diode is also very efficient in amplifying small signals in the radio frequency band, making it an ideal choice for RF applications. For these reasons, the BA 892 E6127 is a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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