Allicdata Part #: | BA892E6327-ND |
Manufacturer Part#: |
BA 892 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SW 35V 100MA SCD-80 |
More Detail: | RF Diode Standard - Single 35V 100mA PG-SCD80-2 |
DataSheet: | BA 892 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.1pF @ 3V, 1MHz |
Resistance @ If, F: | 500 mOhm @ 10mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-80 |
Supplier Device Package: | PG-SCD80-2 |
Base Part Number: | BA892 |
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RF diodes are a type of semiconductor device that are used to switch a radio frequency (RF) signal on and off. These components allow devices, such as televisions and cell phones, to receive and transmit data using radio frequencies. The BA 892 E6327 is a particular type of RF diode, and it has very specific applications and working principles.
The BA 892 E6327 is a diode designed for use in RF power amplifiers. It is a junction amplifier specifically designed for high-power applications. It has a high current gain, and is typically used for amplifying power signals up to 100 W. This makes it ideal for high-power applications such as cellular communications, satellite communications, and broadcasting.
The BA 892 E6327 is a double-sensitive device, and can be used as a detector diode or an amplifier diode. As a detector diode, it can detect the amplitude of the incoming signal. As an amplifier diode, it can amplify the amplitude of the incoming signal. This makes it ideal for use in both transmitting and receiving applications.
The BA 892 E6327 has a working principle that is similar to other RF diodes. When the diode is forward biased, the current flowing through it is amplified due to a combination of the voltage drop across the depletion and drift regions, and the junction capacitance. This amplification of the current is what gives the diode its power gain.
When the diode is reverse biased, the voltage across the depletion layer is increased. This prevents carriers from passing through the depletion layer, and thus the diode is effectively cut off. This gives the diode its switching capability, and is what makes it useful for applications such as transmitting and receiving radio signals.
In summary, the BA 892 E6327 is a type of RF diode that is designed for high-power applications. It has a high current gain, and can be used both as a detector diode and an amplifier diode. Its working principle is similar to that of other RF diodes, and involves a combination of forward and reverse biasing to provide amplification and switching. As such, the BA 892 E6327 is an ideal component for use in modern, high-power devices.
The specific data is subject to PDF, and the above content is for reference
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