BA277,115 Discrete Semiconductor Products |
|
Allicdata Part #: | 568-5990-2-ND |
Manufacturer Part#: |
BA277,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE BAND-SWITCHING SOD523 |
More Detail: | RF Diode Standard - Single 35V 100mA 715mW SOD-523 |
DataSheet: | BA277,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.2pF @ 6V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 715mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Base Part Number: | BA277 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF diodes are semiconductor devices that are designed to act as switches and can be used in many different electronic applications. They have a narrow range of frequency levels and are typically used for radio frequency (RF) applications such as cell phones and broadcasting. Among some of the most common types of diodes for RF applications are BA277,115.
BA277,115 are tunnel diodes that are usually made from gallium arsenide (GaAs). They are relatively small and are used in low-power applications due to their low voltage ratings.
The operating range of the BA277,115 is from 5 to 50 GHz. They have an operating temperature range of -50° to +120°C and can handle up to 15 watts of RF power.
These diodes also have a very low capacitance of around 25 pF. This allows them to be used in very high frequency applications that require low capacitance levels.
The most common application for BA277,115 is as a low-noise amplifier in RF circuits. They are also used in microwave circuits and work as a switch to perform high-speed switching applications.
The key to BA277,115 diodes is that they are able to pass signals with minimal distortion. This makes them ideal for sensitive applications where even low distortion can affect the quality of the signal.
The working principle of these diodes is based on tunneling. When an electric field is applied to the diode, electrons flow through a narrow channel within the diode, creating a current. This process is referred to as tunneling.
The tunneling process is also responsible for the switching action in These diodes. When a sufficient electrical field is applied, the electrons tunnel through the inner channel and the current is switched on. When the electric field is removed, the electrons no longer have to tunnel, and the current is switched off.
The switching action of the BA277,115 is extremely fast, making them ideal for high-speed applications. They also have a very low capacitance, which allows them to operate at high frequencies without distortion.
BA277,115 are ideal for a variety of RF applications, such as cell phone and broadcasting. They are small, reliable, and have a low voltage rating, making them easy to use in all sorts of projects. Their tunneling technology makes them fast and allows them to pass signals with minimal distortion, making them ideal for sensitive applications.
The specific data is subject to PDF, and the above content is for reference
DIODE SCHOTTKY RF 70V 1A SOT-363RF Diode...
DIODE PIN GP 50V 1A MINIPAKRF Diode PIN ...
DIODE PIN 50V 100MA SOD-323RF Diode PIN ...
DIODE PIN HF SW 30V 100MA VMN2RF Diode P...
DIODE SCHOTTKYRF Diode Schottky - Single...
DIODE PIN 60V 100MA EMD2 TRRF Diode PIN ...