BA278,115 Allicdata Electronics

BA278,115 Discrete Semiconductor Products

Allicdata Part #:

568-5991-2-ND

Manufacturer Part#:

BA278,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE BAND-SWITCHING 35V SOD523
More Detail: RF Diode Standard - Single 35V 100mA 715mW SOD-523
DataSheet: BA278,115 datasheetBA278,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100mA
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 700 mOhm @ 2mA, 100MHz
Power Dissipation (Max): 715mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Base Part Number: BA278
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BA278,115 diode is a popular member of the diode family and is often used for its radio frequency (RF) characteristics. This diode is part of a range of Schottky barrier diodes, and it has a number of specific applications and working principles.

This diode is an N-channel type Schottky barrier diode which has been designed for use as a detector, mixer or switching diode in microwave and millimetre-wave circuits. It can also be used for mixer protection, for DX amplification and for RF switching. The diode can also be used in other applications where a fast-switching diode is required.

The working principle of this diode is based on its Schottky barrier structure. It contains a junction between a metal layer, sometimes referred to as the ‘Schottky finger’, and the semiconductor N-type layer on the other side of the diode. When a current is passed through the diode, a voltage drop is created which is known as the ‘Schottky barrier voltage’.

The Schottky barrier voltage is responsible for the diode\'s fast switching speed, as the resulting forward biased junction eliminates the charge time associated with traditional pn junction diodes. This feature makes the BA278,115 well-suited to RF applications, as the fast switching speed allows a wide range of signals to be handled without interference.

Another key feature of the diode is its high current rating. It has a maximum reverse current rating of 6 µA, which is well suited for use in RF circuits. In addition, the diode has a fairly high thermal stability, which is beneficial for circuit operation in high-temperature environments.

The BA278,115 is an ideal solution for applications which require fast switching and high current rating. Its Schottky barrier structure makes it suitable for use in a wide range of RF circuits, such as mixers, detectors and DX amplifiers.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BA27" Included word is 4
Part Number Manufacturer Price Quantity Description
BA277,115 NXP USA Inc 0.0 $ 1000 DIODE BAND-SWITCHING SOD5...
BA278,115 NXP USA Inc 0.0 $ 1000 DIODE BAND-SWITCHING 35V ...
BA277,135 NXP USA Inc 0.0 $ 1000 DIODE BAND-SWITCHING 35V ...
BA277,335 NXP USA Inc 0.0 $ 1000 DIODE BAND-SWITCHING 35V ...
Latest Products
HSMS-280L-TR2G

DIODE SCHOTTKY RF 70V 1A SOT-363RF Diode...

HSMS-280L-TR2G Allicdata Electronics
HMPP-3860-TR1

DIODE PIN GP 50V 1A MINIPAKRF Diode PIN ...

HMPP-3860-TR1 Allicdata Electronics
BAP70-03,115

DIODE PIN 50V 100MA SOD-323RF Diode PIN ...

BAP70-03,115 Allicdata Electronics
RN242CST2RA

DIODE PIN HF SW 30V 100MA VMN2RF Diode P...

RN242CST2RA Allicdata Electronics
SMSA7621-060

DIODE SCHOTTKYRF Diode Schottky - Single...

SMSA7621-060 Allicdata Electronics
RN142STE61

DIODE PIN 60V 100MA EMD2 TRRF Diode PIN ...

RN142STE61 Allicdata Electronics