BA278,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-5991-2-ND |
Manufacturer Part#: |
BA278,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE BAND-SWITCHING 35V SOD523 |
More Detail: | RF Diode Standard - Single 35V 100mA 715mW SOD-523 |
DataSheet: | BA278,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard - Single |
Voltage - Peak Reverse (Max): | 35V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 1.2pF @ 6V, 1MHz |
Resistance @ If, F: | 700 mOhm @ 2mA, 100MHz |
Power Dissipation (Max): | 715mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Base Part Number: | BA278 |
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The BA278,115 diode is a popular member of the diode family and is often used for its radio frequency (RF) characteristics. This diode is part of a range of Schottky barrier diodes, and it has a number of specific applications and working principles.
This diode is an N-channel type Schottky barrier diode which has been designed for use as a detector, mixer or switching diode in microwave and millimetre-wave circuits. It can also be used for mixer protection, for DX amplification and for RF switching. The diode can also be used in other applications where a fast-switching diode is required.
The working principle of this diode is based on its Schottky barrier structure. It contains a junction between a metal layer, sometimes referred to as the ‘Schottky finger’, and the semiconductor N-type layer on the other side of the diode. When a current is passed through the diode, a voltage drop is created which is known as the ‘Schottky barrier voltage’.
The Schottky barrier voltage is responsible for the diode\'s fast switching speed, as the resulting forward biased junction eliminates the charge time associated with traditional pn junction diodes. This feature makes the BA278,115 well-suited to RF applications, as the fast switching speed allows a wide range of signals to be handled without interference.
Another key feature of the diode is its high current rating. It has a maximum reverse current rating of 6 µA, which is well suited for use in RF circuits. In addition, the diode has a fairly high thermal stability, which is beneficial for circuit operation in high-temperature environments.
The BA278,115 is an ideal solution for applications which require fast switching and high current rating. Its Schottky barrier structure makes it suitable for use in a wide range of RF circuits, such as mixers, detectors and DX amplifiers.
The specific data is subject to PDF, and the above content is for reference
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