BA277,335

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard - Single
Voltage - Peak Reverse (Max):	35V
Current - Max:	100mA
Capacitance @ Vr, F:	1.2pF @ 6V, 1MHz
Resistance @ If, F:	--
Power Dissipation (Max):	715mW
Operating Temperature:	-65°C ~ 150°C (TJ)
Package / Case:	SC-79, SOD-523
Supplier Device Package:	SOD-523
Base Part Number:	BA277

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BA277,335 RF Diodes - Application Field and Working Principle

Diodes are an essential component of an electronic device and a highly versatile device for controlling, monitoring or rectifying electrical signals. Diodes form the basis of, for example, rectifiers, voltage stabilizers, half-wave detectors, amplitude limiters and frequency discriminators, offering the user a selection of switching and control features. Typical applications range from the power supply, RF power amplification and reception of radio signals.The BA277,335 diodes belong to the class of Radio Frequency (RF) diodes. Their main distinguishing feature is their ability to pass signals in the frequency range of up to 1GHz. Radio transmission is usually operating in this range and this type of diode is specially designed to handle such signals with minimal distortion. This makes the diode very suitable for applications that need to transmit and receive high-frequency signals, such as communication or RFID systems.The working principle of BA277,335 diodes is the same as any diode. They are composed of two layers of semiconductor material separated by a special type of junction. The material and the junction design determines how easy it is for the electrons to move from one layer to another, which is indicated by the built-in voltage of the diode (also known as the barrier potential). When a forward bias is applied to the diode, the built-in voltage is overcome, allowing electrons to flow from the anode to the cathode, resulting in a current flow. The diode will then act as a closed switch, allowing current to pass through, thereby creating a rectified signal.The BA277,335 diodes have a particularly low reverse-bias voltage of 0.2V, which allows them to pass signals with minimal distortion at high frequencies, even in presence of noise. Additionally, they exhibit a low forward voltage drop of 0.5V, ensuring that power losses remain low over a wide range of frequencies.The fast switching time of BA277,335 diodes makes them ideal for high-speed applications. They have been found to have a typical switching time of 250s when switching from a high to a low current level and a reverse activation time of 600s at the rated 10mA current level. This makes them well-suited for RF-powered applications, allowing the user to control or modulate the signal with minimal distortion.The BA277,335 diodes offer a combination of excellent high-frequency performance and fast switching times, making them ideally suited for applications such as power amplifiers, detectors, voltage multipliers, frequency multipliers and RF modulators. They are also a viable choice for RF-powered applications, such as communication and RFID systems, as well as data transmission systems. Moreover, their ability to pass signals in the 1 GHz frequency range makes them well-suited for applications related to satellite radio and satellite phones.In conclusion, the BA277,335 diodes are a great example of a Radio Frequency diode with superior performance characteristics. They offer fast switching times, low distortion at high frequencies and low power losses, making them well-suited for a wide array of applications, from power management to RF-powered communication.

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