BAP70-02,115 Allicdata Electronics

BAP70-02,115 Discrete Semiconductor Products

Allicdata Part #:

568-1940-2-ND

Manufacturer Part#:

BAP70-02,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE PIN 50V 100MA SOD-523
More Detail: RF Diode PIN - Single 50V 100mA 415mW SOD-523
DataSheet: BAP70-02,115 datasheetBAP70-02,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05855
6000 +: $ 0.05334
15000 +: $ 0.04814
30000 +: $ 0.04554
75000 +: $ 0.04111
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
Power Dissipation (Max): 415mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Base Part Number: BAP70
Description

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The BAP70-02,115 is a type of RF diode, used in various applications. It is a two-terminal semiconductor device, typically constructed from a single piece of PN junction material. It is used for switching, rectification, and signal coupling. This type of diode is widely used in radio frequency (RF) circuits, as it can transmit, rectify and amplify radio frequency signals.

The BAP70-02,115 is a bipolar junction transistor (BJT) that is built with a p-type barrier region between two n-type semi-conducting layers. The barrier forms a rectifier, enabling current to flow in one direction only. It can be used in applications where a single diode is used as a voltage regulator, or in radio frequency (RF) circuits, as it has a low forward voltage drop that can amplify radio frequency signals. It can also be used in power supplies, as it can limit the amount of current that can pass through.

The BAP70-02,115 is a two-terminal device, with a cathode and an anode. The anode is made with a more positive charge than the cathode, and this creates an electric field across the diode. When a voltage is applied across the two terminals, negative charge carriers move from the anode to the cathode, and positive charge carriers move from the cathode to the anode. This movement of charge carriers is what enables current to flow through the diode.

The BAP70-02,115 is typically used in RF applications as it has a low capacitance and an extremely high breakdown voltage. It is also able to handle large amounts of power, and can be used for coupling, switching and rectification of RF signals. The diode can also be used as an analog voltage regulator, as the difference in voltage between the cathode and the anode can be regulated, to provide regulated voltage output.

The BAP70-02,115 is a versatile diode, suitable for a variety of applications. Its capabilities make it useful in radio frequency circuits, providing rectification, signal coupling and RF amplification. It is also able to provide voltage regulating, allowing for precise voltage control. This type of diode is useful in many applications, as it is robust, reliable and able to handle large amounts of power.

The specific data is subject to PDF, and the above content is for reference

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