BAP70Q,125 Discrete Semiconductor Products

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The BAP70Q,125 is a member of the RF diode family. Designed specifically for efficient use in radio frequency (RF) applications, BAP70Q,125 is well suited for quickly charging and discharging capacitors. It is a planar sensitive diode, meaning that it is an area of a semiconductor unit that has two electrodes for electrical connection. It has a maximum reverse voltage of 125V and a maximum forward current of 70mA. The BAP70Q,125 also features a low switching threshold voltage and a low capacitance.

The BAP70Q,125 has a wide range of applications such as signal limiting, signal detection, and amplitude modulation (AM) detection. This diode has a low junction capacitance and low switching threshold voltage, making it suitable for signal limiting and signal detection. The diode’s capability of quickly charging and discharging capacitors makes it suitable for AM detection. The BAP70Q,125 also has high-speed switching capabilities, making it suitable for use in other switching applications.

The working principle of the BAP70Q,125 is based on the semiconductor effect, meaning that when a voltage is applied to the electrodes, the semiconductor material in the junction between the electrodes will be attracted towards the opposite charge. This causes current to flow through the material, and this current is known as the forward current. When the voltage is reversed, the current will flow in the opposite direction and is known as the reverse current.

The BAP70Q,125 has a breakdown voltage of 125V and a maximum continuous forward current of 70mA. The diode can handle up to 150V reverse bias. When the reverse bias voltage is increased to more than 150V, the diode will exhibit a high breakdown current level. The diode also has a low capacitance of 150pF, meaning that it can switch quickly between the on and off states.

When the diode is used for signal limiting and signal detection, the reverse bias voltage is set slightly lower than the peak signal voltage. When the signal voltage reaches the set level, the diode starts to conduct and the signal is limited. When the diode is used for AM detection, the reverse bias voltage is set slightly higher than the peak signal voltage. The capacitance of the diode will then respond quickly to the signal and the signal can be detected.

In conclusion, the BAP70Q,125 is a versatile diode that is well suited for RF applications. It has a low switching threshold, a low capacitance, and a high breakdown voltage, enabling it to be used in a wide range of signal limiting and signal detection applications. Due to its high-speed switching between the on and off states, the BAP70Q,125 can also be used for other switching applications.

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