Allicdata Part #: | 568-1942-2-ND |
Manufacturer Part#: |
BAP70-05,215 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 50V 100MA SOT-23 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 50V 100mA 250... |
DataSheet: | BAP70-05,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08316 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 20V, 1MHz |
Resistance @ If, F: | 1.9 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAP70-05 |
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The BAP70-05,215 is a current-controlled diode. It is specifically classified as an RF diode, since it is engineered to work within the radio frequency range, typically between 10 kHz and 1000 GHz. Although traditional diodes are typically used for such purposes, the BAP70-05,215 offers several key advantages over these, including greater versatility and better performance.
The BAP70-05,215 is constructed using semiconductor materials and is designed to conduct electricity in one direction. This single-direction property makes them useful in radio frequency applications, as they can control the oscillation of radio frequency signals. The device also has the capacity to detect, control and measure radio frequency signals.
The semiconductor material used to create the BAP70-05,215 allows the diode to remain in a highly-resonant state, so that it can respond to radio frequency waves. It also has a precisely tuned structure, which allows the device to absorb radio frequency fields of a certain frequency and convert them into electric current and/or voltage signals. The current or voltage signals can then be used in various applications.
Common uses for the BAP70-05,215 include antenna amplifiers, frequency multipliers, harmonic generators, frequency tuning and filtering. It can also be used in other radio frequency applications, such as the calibration of television receivers, broadcast radios and telecommunication systems.
The most convenient way to control and measure the operation of the diode is by using the voltage applied to its terminals. When a certain voltage is applied across the device, it restricts the flow of electric current. This control characteristic makes it easy to measure and control the parameters of a radio frequency signal, such as its frequency, amplitude, phase and modulation.
The low noise and high power handling capacity of the BAP70-05,215 make it an ideal choice for complex radio frequency systems. It is also resistant to electromagnetic interference, making it suitable for use in hostile radio frequency environments. Additionally, the device requires little to no maintenance, making it a cost-effective choice.
In summary, the BAP70-05,215 is a unique diode designed for use in radio frequency applications. Due to its versatility, low noise and high power handling capabilities, it is suitable for several uses. This includes antenna amplification, frequency multipliers, harmonic generators and frequency tuning. Additionally, the device is highly resistant to electromagnetic interference and requires little maintenance.
The specific data is subject to PDF, and the above content is for reference
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