Allicdata Part #: | BAR63-02WH6433-ND |
Manufacturer Part#: |
BAR 63-02W H6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SW 50V 100MA SCD80 |
More Detail: | RF Diode PIN - Single 50V 100mA 250mW PG-SCD80-2 |
DataSheet: | BAR 63-02W H6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-80 |
Supplier Device Package: | PG-SCD80-2 |
Base Part Number: | BAR63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are components that can control the flow of electricity and are used in a variety of ways for a wide range of applications. The BAR 63-02W H6433 is a special type of diode, known as a Radio Frequency (RF) diode, and has a wide range of uses. This article will examine the application fields and working principle of the BAR 63-02W H6433 in more detail.
In terms of application fields, the BAR 63-02W H6433 is most commonly used as a rectifier, or electronic switch, to convert AC signals into DC signals. It has a maximum reverse breakdown voltage of 64V and can handle power inputs of up to 3 Watts. The BAR 63-02W H6433 is also used to limit surge currents and effectively block high-frequency RF signals. It has a low equivalent parasitic capacitance, making it ideal for use in high-frequency applications such as amplifiers and oscillators.
The working principle of the BAR 63-02W H6433 revolves around its rectification capability, which is mainly due to the built-in P-N junction contained within the device. This P-N junction is formed by a layer of N-type material (with an abundance of negatively charged electrons) and a layer of P-type material (with an abundance of positively charged “holes”). The P-N junction acts as a barrier to current flow and when the voltage is increased on either side, it forces electrons to move from the N-side to the P-side, and holes from the P-side to the N-side, thus forming what is known as a depletion zone. This zone restricts current from flowing in the reverse direction and facilitates rectification.
In addition to its rectification capability, the BAR 63-02W H6433 is also known for its low power consumption. This diode can be employed to provide fast switching facilities with very low voltage drops, and its low power consumption makes it an ideal choice for power management applications. Furthermore, the BAR 63-02W H6433 is relatively unaffected by ambient temperature changes and its response time is typically faster than most other diodes.
Overall, the BAR 63-02W H6433 is a versatile RF diode with multiple uses in a wide range of applications. Its rectification capability makes it ideal for DC signal conversion, while its low power consumption makes it suitable for power management applications. Furthermore, its resistance to ambient temperature changes and fast response time make it a reliable choice for even the most demanding of tasks.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAR74E6327HTSA1 | Infineon Tec... | 0.02 $ | 1000 | DIODE GEN PURP 50V 250MA ... |
BAR43 | ON Semicondu... | -- | 1000 | DIODE SCHOTTKY 30V 200MA ... |
BAR42FILM | STMicroelect... | -- | 6000 | DIODE SCHOTTKY 30V 100MA ... |
BAR43SFILM | STMicroelect... | -- | 45000 | DIODE ARRAY SCHOTTKY 30V ... |
BAR43FILM | STMicroelect... | -- | 12000 | DIODE SCHOTTKY 30V 100MA ... |
BAR18FILM | STMicroelect... | -- | 12000 | DIODE SCHOTTKY 70V 70MA S... |
BAR46AFILM | STMicroelect... | -- | 24000 | DIODE ARRAY SCHOTTKY 100V... |
BAR46FILM | STMicroelect... | -- | 18000 | DIODE SCHOTTKY 100V 150MA... |
BAR43S | ON Semicondu... | -- | 1000 | DIODE ARRAY SCHOTTKY 30V ... |
BAR6302LE6327XTMA1 | Infineon Tec... | 0.04 $ | 1000 | DIODE RF SGL 50V 100MA TS... |
BAR6304WH6327XTSA1 | Infineon Tec... | 0.04 $ | 1000 | DIODE RF SW 50V 100MA SOT... |
BAR6305WH6327XTSA1 | Infineon Tec... | -- | 1000 | DIODE RF SW 50V 100MA SOT... |
BAR9002ELSE6327XTSA1 | Infineon Tec... | 0.06 $ | 1000 | DIODE PIN SGL 80V 100MA T... |
BAR6406WH6327XTSA1 | Infineon Tec... | 0.07 $ | 1000 | DIODE RF PIN 150V 100MA S... |
BAR6702VH6327XTSA1 | Infineon Tec... | -- | 1000 | DIODE RF PIN 150V 200MA S... |
BAR6305E6327HTSA1 | Infineon Tec... | 0.08 $ | 1000 | DIODE RF CC 50V 100MA SOT... |
BAR6306E6327HTSA1 | Infineon Tec... | 0.08 $ | 1000 | DIODE RF CA 50V 100MA SOT... |
BAR8802LRHE6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN SGL 80V 100MA T... |
BAR64V-05W-E3-18 | Vishay Semic... | 0.09 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR64V-05W-E3-08 | Vishay Semic... | 0.11 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR 50-02L E6327 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA TS... |
BAR 50-02V E6327 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA SC... |
BAR6302LE6433XT | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA TS... |
BAR 63-02V E6327 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA 50... |
BAR 63-02W E6127 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA SC... |
BAR 63-02W E6327 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA SC... |
BAR 63-02W E6433 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA SC... |
BAR 63-03W E6433 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 50V 100MA SO... |
BAR6304WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
DIODE SCHOTTKY RF 70V 1A SOT-363RF Diode...
DIODE PIN GP 50V 1A MINIPAKRF Diode PIN ...
DIODE PIN 50V 100MA SOD-323RF Diode PIN ...
DIODE PIN HF SW 30V 100MA VMN2RF Diode P...
DIODE SCHOTTKYRF Diode Schottky - Single...
DIODE PIN 60V 100MA EMD2 TRRF Diode PIN ...