Allicdata Part #: | BAR6304WE6327HTSA1TR-ND |
Manufacturer Part#: |
BAR6304WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE PIN 50V 0.1A 0.25W SOT-323 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 100mA ... |
DataSheet: | BAR6304WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAR63-04 |
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Application Field and Working Principle of BAR6304WE6327HTSA1
BAR6304WE6327HTSA1 is a device belonging to a family of RF diodes, which are widely used in various sectors. This device, in particular, is a Schottky diode, a semiconductor component commonly used in radio frequency applications that can be easily identified by its distinctive two-leads package. As such, it is widely used both in industry and in academic research, either as a rectifying or switching component. This type of diode is particularly useful in applications requiring a high degree of frequency selectivity, such as RF filters, RF front-end amplifiers and receivers, detectors, mixers and transmitters.
A Schottky diode is a special type of diode characterized by a resonating tunnel structure and a low barrier potential that make it capable of rectifying or switching at high frequencies and high currents. The particular characteristics of the diode depend on its manufacturing process, the materials used and the structure of the device itself. The structure of the BAR6304WE6327HTSA1 is a PN junction, also known as a Schottky junction. In such an arrangement, a metal-semiconductor interface is formed, allowing electrons to cross back and forth from the metal to the semiconductor material. This process generates a rectifying or switching effect, allowing the diode to either conduct or block current depending on the direction of the applied voltage.
Another characteristic of the BAR6304WE6327HTSA1 is that it is capable of switching and rectifying at high frequencies. This is mainly due to its low capacitance, which allows it to operate at highspeed frequencies, as well as its low junction capacitance, which reduces reverse recovery time. Its low leakage current also allows it to be used in applications that require high-frequency switching, such as oscillators, data converters and filters.
In addition to its industrial and research applications, the BAR6304WE6327HTSA1 is also useful in many other sectors, including automotive, computing and telecommunications. Its small size and low cost make it especially suitable for handheld electronic devices, such as PDAs and cell phones. In these cases, the diode can be used to switch between different voltage sources and to protect components from overvoltage.
In conclusion, the BAR6304WE6327HTSA1 diode is a widely utilized RF component with many potential applications in industrial, research and consumer sectors. It is a Schottky diode with a PN junction, capable of rectifying and switching high voltages and frequencies. Its low capacitance and low junction capacitance ensure its usefulness in all kinds of high-frequency applications, including those requiring a high degree of frequency selectivity. Its cost-effective size and low leakage current also make it suitable for handheld devices, while its ability to protect components from overvoltage makes it an ideal choice for automotive, computing and telecommunications applications.
The specific data is subject to PDF, and the above content is for reference
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