Allicdata Part #: | BAR6305WH6327XTSA1TR-ND |
Manufacturer Part#: |
BAR6305WH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SW 50V 100MA SOT23 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 50V 100mA 250... |
DataSheet: | BAR6305WH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAR63-05 |
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The BAR6305WH6327XTSA1 is a RF diode designed for high frequency applications. It is used in a wide range of applications such as radio frequency (RF) communication systems, radio transmitters, radio receivers, and radio transceivers. It is also used in broadband applications such as CATV, VSAT, WLAN, GPS, and software-defined radio (SDR).
The BAR6305WH6327XTSA1 is a solid-state device with no moving parts. It consists of an anode, a cathode and a junction. The junction forms a barrier between the two electrodes, allowing current to flow in only one direction. The device is composed of a reverse-biased PN junction, which behaves like a semiconductor diode when subjected to voltage. It operates at a very high frequency (1mHZ-3GHz) and is temperature-stable, so it can withstand extreme environmental conditions. The device has a relatively low capacitance and low noise, making it a suitable choice for high frequency applications.
This diode is ideal for applications such as: high frequency DC-DC converters, power supply rectification, switching, frequency translation and frequency conversion. It can also be used in switching applications and radio frequency amplifiers. It has a number of advantages over traditional diodes, such as reduced switching losses, less noise, and improved frequency response. It is also more efficient due to its higher voltage breakdown and reverse leakage current.
The working principle of the BAR6305WH6327XTSA1 is based on the concept of a PN junction diode. When a forward voltage is applied to the diode, it will conduct current and the voltage across the diode will drop. When the applied voltage is reversed, the diode starts conducting in the opposite direction and no voltage is dropped across the diode. The diode also has a low reverse leakage current, meaning that it can be used as a switch. The device has an efficient heat dissipation feature, meaning that it can withstand temperatures up to 150°C.
In summary, the BAR6305WH6327XTSA1 is a highly reliable RF diode designed for high frequency applications. It has a wide range of applications including radio frequency communications, switching, frequency translation and frequency conversion. It has a low capacitance, low noise and high voltage breakdown, making it an ideal choice for high frequency applications. It also has an efficient heat dissipation feature, meaning that it can withstand temperatures up to 150°C. The diode is an ideal choice for applications such as high frequency DC-DC converters, power supply rectification, switching, frequency translation and frequency conversion.
The specific data is subject to PDF, and the above content is for reference
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BAR6304WH6327XTSA1 | Infineon Tec... | 0.04 $ | 1000 | DIODE RF SW 50V 100MA SOT... |
BAR6305WH6327XTSA1 | Infineon Tec... | -- | 1000 | DIODE RF SW 50V 100MA SOT... |
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BAR6702VH6327XTSA1 | Infineon Tec... | -- | 1000 | DIODE RF PIN 150V 200MA S... |
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BAR6306E6327HTSA1 | Infineon Tec... | 0.08 $ | 1000 | DIODE RF CA 50V 100MA SOT... |
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BAR6304WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6305WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6306WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN 50V 0.1A 0.25W ... |
BAR6402LRHE6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SGL 150V 100MA T... |
BAR6404WE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SER 150V 100MA S... |
BAR6405E6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6405WE6327BTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6405WE6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CC 150V 100MA SO... |
BAR6406WE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF CA 150V 100MA SO... |
BAR6704E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE SIL PIN 150V 200MA ... |
BAR66E6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE PIN ARRAY 150V 200M... |
BAR6302WH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | DIODE RF SW 50V 100MA SCD... |
BAR63V-03-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR63V-04-G3-08 | Vishay Semic... | 0.0 $ | 1000 | DIODE RF PIN DUAL CC SOT3... |
BAR6303WE6327HTSA1 | Infineon Tec... | 0.03 $ | 93000 | DIODE RF SGL 50V 100MA SO... |
BAR6302VH6327XTSA1 | Infineon Tec... | 0.04 $ | 87000 | DIODE RF SW 50V 100MA SC7... |
BAR6402VH6327XTSA1 | Infineon Tec... | -- | 33000 | DIODE RF PIN 150V 100MA S... |
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BAR6404E6327HTSA1 | Infineon Tec... | 0.04 $ | 30000 | DIODE RF SER 150V 100MA S... |
BAR6405E6327HTSA1 | Infineon Tec... | 0.04 $ | 9000 | DIODE RF CC 150V 100MA SO... |
BAR6406E6327HTSA1 | Infineon Tec... | 0.04 $ | 3000 | DIODE RF CA 150V 100MA SO... |
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