BAR6503WE6327HTSA1 Allicdata Electronics
Allicdata Part #:

BAR6503WE6327HTSA1TR-ND

Manufacturer Part#:

BAR6503WE6327HTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SGL 30V 100MA SOD-323
More Detail: RF Diode PIN - Single 30V 100mA 250mW PG-SOD323-2
DataSheet: BAR6503WE6327HTSA1 datasheetBAR6503WE6327HTSA1 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.05421
6000 +: $ 0.05119
15000 +: $ 0.04668
30000 +: $ 0.04367
75000 +: $ 0.03915
150000 +: $ 0.03764
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 100mA
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900 mOhm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Base Part Number: BAR65
Description

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The BAR6503WE6327HTSA1 is a diode type RF device that is typically used in high frequency materials such as antennas, radomes, and broadband communication systems. It has the ability to work in multiple frequencies and provide an RF transmission response in terms of frequency, phase and voltage. The device is made to handle high power demands and has a wide range of compatible applications for many common high frequency materials.

The BAR6503WE6327HTSA1 is a bidirectional diode for applications operating in the high frequency range. This type of device is able to regulate voltage from one direction in high-activity systems. It has a symmetrical spike voltage diode with coaxial contacts, which helps achieve an easy connection with other components or signals. The diode has a peak surge voltage of 85V and a capacitance of 0.37 pF.

The BAR6503WE6327HTSA1 is designed to be used in RF transmitters, receivers, and transceivers. It is capable of working with power ranging from 8W up to 25W. This diode has a very low dynamic resistance, which enables it to control the direction of current in the high-wave frequency range. This makes it very advantageous in areas such as wireless broadband communication systems.

The working principle of the BAR6503WE6327HTSA1 diode device is simple and effective. The device works based on the principle of p-n junction. In this principle, the current flow between the n-type and p-type materials depends on the applied energy. When it is placed in a circuit, the device conducts the flow of electrons from the n-type material to the p-type one. The flow of current regulates the voltage, which in turn helps control the RF current and voltage in the circuit.

The device is also capable of controlling the phase of the current in the circuit. By increasing the size of its capacitance, the device is able to regulate the phase of the current by reducing the amount of current that is flowing across the diode. This helps to regulate the phase of the RF current and make it organized.

The BAR6503WE6327HTSA1 is a great choice for sensitive applications that require a high level of control and regulation. By taking advantage of its advanced features, the device is able to achieve a great deal of precision in controlling the directional and phase of the current in the circuit. In addition, the device is able to maintain the desired current and voltage levels even at high power levels and frequencies. This is why the device is used in so many applications that require precise levels of control and performance.

The specific data is subject to PDF, and the above content is for reference

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