Allicdata Part #: | BAR6305WE6327HTSA1TR-ND |
Manufacturer Part#: |
BAR6305WE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE PIN 50V 0.1A 0.25W SOT-323 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 50V 100mA 250... |
DataSheet: | BAR6305WE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAR63-05 |
Description
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Introduction
BAR6305WE6327HTSA1 is a type of diode in the RF field. It is commonly used in RF power amplifiers, RF transmission lines and applications where high voltage robustness is required. This diode can be used in a variety of ways, but has several key features that make it especially well suited for many applications.Application Field
Due to its high voltage robustness, BAR6305WE6327HTSA1 is commonly used in RF power amplifiers. In this application, the device is used to switch a power amplifier between low power and high power modes, allowing the amplifier to operate efficiently in either state. The diode is also used in RF transmission lines, where its large maximum power rating makes it ideal for use in high-power circuits. The diode can also be used as a voltage regulator, as its small size and high power rating make it a suitable choice for many voltage regulators.Working Principle
The working principle of BAR6305WE6327HTSA1 is based on a physical effect called the Gunn effect. This effect is achieved by the charge carriers in the diode being accelerated in a thin volume of high resistivity material due to an electric field. This causes the charge carriers to gain kinetic energy and generate high frequency microwave radiation. The diode then acts as a rectifier, converting this radiation to a constant current. The diode is also capable of dissipating large amounts of power, allowing it to handle high-power applications.Conclusion
BAR6305WE6327HTSA1 is a type of diode in the RF field, commonly used in applications ranging from RF power amplifiers to voltage regulators. It is designed to handle high power applications and its high voltage robustness makes it suitable for many applications. The diode works on the Gunn effect, which allows it to convert high frequency microwave radiation into a constant current. As such, it is an invaluable device for many RF applications.The specific data is subject to PDF, and the above content is for reference
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