BAR 90-081LS E6327 Allicdata Electronics
Allicdata Part #:

BAR90-081LSE6327-ND

Manufacturer Part#:

BAR 90-081LS E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE ARRAY 80V 100MA TSSLP-8
More Detail: RF Diode PIN - 4 Independent 80V 100mA 150mW TSSLP...
DataSheet: BAR 90-081LS E6327 datasheetBAR 90-081LS E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - 4 Independent
Voltage - Peak Reverse (Max): 80V
Current - Max: 100mA
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
Power Dissipation (Max): 150mW
Operating Temperature: 150°C (TJ)
Package / Case: 8-XFDFN
Supplier Device Package: TSSLP-8-1
Description

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The BAR 90-081LS E6327 is a special kind of diode device which has a distinct application field, as well as a unique working principle. To understand the device, it is necessary to know both the application and the method of operation.

The BAR 90-081LS E6327 is a diode specifically designed to be used in applications of radio frequency (RF). These diodes are constructed to be able to handle extremely high frequencies, and as a result, they are commonly used in any electronics application where RF needs to be processed. This could include cellular phones, satellites, radar systems, wireless routers, and radio transmitters. The BAR 90-081LS E6327 is capable of working at frequencies up to 10GHz, which makes it a highly sought after device in this field.

In addition to its use in RF applications, the BAR 90-081LS E6327 is also used in robotics electronics. Because of its high frequency capabilities, it can act as an internal switch for certain robotic tasks. This can be used for tasks ranging from basic control functions to more complex logic operations.

Now, let\'s take a look at the working principle of these diodes. At its most basic, a diode utilizes an electrical field to control the transfer of electrons between two terminals. In the case of the BAR 90-081LS E6327, this is done using a combination of a p-type semiconductor and a n-type semiconductor. This creates a region known as a junction, which allows the device to limit the amount of current which can flow through it. Furthermore, the doping effect of the semiconductors allow the BAR 90-081LS E6327 to be extremely efficient, while still operating at very high frequencies.

As can be seen, the BAR 90-081LS E6327 is a highly specialized type of diode. It is specifically designed to work with high frequency applications, making it an important component in many electronics systems. Furthermore, the use of p and n-type semiconductors gives these diodes their unique characteristics, allowing them to operate at a high efficiency while still being able to handle a significant amount of current. For these reasons, the BAR 90-081LS E6327 is an incredibly useful device and is highly sought after for its unique capabilities.

The specific data is subject to PDF, and the above content is for reference

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