BAR 50-02V E6327 Allicdata Electronics
Allicdata Part #:

BAR50-02VE6327-ND

Manufacturer Part#:

BAR 50-02V E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SGL 50V 100MA SC-79
More Detail: RF Diode PIN - Single 50V 100mA 250mW PG-SC79-2
DataSheet: BAR 50-02V E6327 datasheetBAR 50-02V E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Base Part Number: BAR50
Description

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The BAR 50-02V E6327 is one of the most popular radio frequency (RF) diode products on the market today. As a microwave diode, its main purpose is to provide efficient switching and amplification at high frequencies. It is used in a variety of applications such as communication systems, wireless networks, RFID systems, and radar detection.

The BAR 50-02V E6327 is a Class C RF diode. This type of diode is designed primarily for use in high-power switching applications. It is designed to be highly efficient, and its performance is further enhanced by its low-distortion characteristic and high frequency stability. Its wide range of operating frequencies allows for a variety of applications.

The BAR 50-02V E6327 is composed of a pair of silicon diodes connected in series. This arrangement allows for a high level of current control, while maintain a high degree of isolation between the two diodes. The diode also features a low-voltage reverse bias of up to 6.3V, which is beneficial to microwave applications.

The working principle of a diode is based on the application of electromagnetic radiation. Electromagnetic radiation is used to create an electric field, which creates a current when it passes through the junction of the two diodes.

The application field of the BAR 50-02V E6327 is very broad. It can be used for communication systems, such as long range radio, microwave, and other types of telecommunication applications. It can also be used for wireless networks, such as WiFi and 5G network. Additionally, it can be used for RFID systems and radar detection. It is highly efficient, and its performance can be enhanced by tuning the frequency and voltage of the circuit.

In conclusion, the BAR 50-02V E6327 is a highly efficient RF diode. It is composed of two silicon diodes connected in series, which provides excellent isolation. It is characterized by its high frequency stability, low distortion performance, and low-voltage reverse bias. Additionally, its wide operating range allows for many applications in communication systems, wireless networks, RFID systems, and radar detection.

The specific data is subject to PDF, and the above content is for reference

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