Allicdata Part #: | BAS34-TAPGITB-ND |
Manufacturer Part#: |
BAS34-TAP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 60V 200MA DO35 |
More Detail: | Diode Standard 60V 200mA Through Hole DO-35 |
DataSheet: | BAS34-TAP Datasheet/PDF |
Quantity: | 40000 |
10000 +: | $ 0.02924 |
30000 +: | $ 0.02752 |
50000 +: | $ 0.02580 |
100000 +: | $ 0.02293 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Current - Reverse Leakage @ Vr: | 1nA @ 30V |
Capacitance @ Vr, F: | 3pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
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Diodes - Rectifiers - Single
The BAS34-TAP (Tandem Avalanche Structure with Pair Structure) is a device for the application field of rectification and protection. It is a diode with a single junction of p and n type combined in its structure. BAS34-TAP is a tandem avalanche structure semiconductor with an integrated pair structure to hold the current. It offers low current flow, low power dissipation, high speed switching, and low forward voltage drop.
The application field of BAS34-TAP are such as rectification, EMC/EMI applications, power management, lightning protection, and many more. Its main working principle is to prevent the undesirable flow of current by blocking the unwanted flow. The design of the tandem avalanche structure is such that it couples two energy levels in the same device. This device has two diodes connected in series which results in the BAS34-TAP having a double junction structure.
The advantage of a double junction structure is that it aids in providing adequate protection in both directions, providing adequate current limiting. This structure also offers excellent conduction characteristics both in its reverse and forward directions and guarantees stable current flow. The device also offers low forward voltage drop due to the energy gap between the two junctions, which helps in conserving power.
BAS34-TAPS have high current capacity and offer fast switching. The high current capacity helps protect the user from any unwanted overload current from occurring during operation. The fast switching speed ensures that the device works efficiently and the circuit remains protected at all times. Additionally, the high voltage breakdown capability of BAS34-TAP helps to further protect against any over-voltage or under-voltage.
BAS34-TAP is also a low power consumption device, thus making it an ideal choice for applications requiring efficient power consumption. This makes it a highly cost-effective solution for many applications. Moreover, the tandem avalanche structure also ensures low noise and low switching losses, improving overall performance.
In summary, BAS34-TAP is a single junction diode which offers protection and rectification in different applications. The integrated pair structure and tandem avalanche structure results in low current flow, low power dissipation, high speed switching, and low forward voltage drop. Its low power consumption and high voltage breakdown capabilities make it a highly efficient and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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