BAS4006E6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Anode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	40V
Current - Average Rectified (Io) (per Diode):	120mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1V @ 40mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	100ps
Current - Reverse Leakage @ Vr:	1µA @ 30V
Operating Temperature - Junction:	150°C (Max)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BAS40-06

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Application FieldBAS4006E6327HTSA1 is a single-phase, large current and low-noise rectifier array from Infineon Technologies. The device consists of six independent ultra-low VF power Schottky diodes. It has a low forward voltage that helps it to provide higher efficiency than other diodes and is suitable for a wide range of applications.BAS4006E6327HTSA1 is primarily used in electronic motor drivers and controllers, power supplies and inverters, battery management systems and circuit modifications. In addition, it can also be used in systems such as LED drivers, routers, PLCs and data centers. The device is well-suited for applications where high efficiency and low temperature rise are desired, such as solar and battery charging applications.Working PrincipleBAS4006E6327HTSA1 has six independently controlled rectifiers for controlling current flow in both directions. The rectifiers can be configured in either a parallel or a serial configuration. The device is produced with a low forward voltage drop to attain high efficiency. The device has a maximum reverse voltage of 600V and a wide operating temperature range of -65°C to 150°C.The device has a high surge current capability of 3.8A at 25°C. This helps it to supply higher current when the load is high. The device has a high switch-on temperature of 135°C, which enables a fast-switching operation with low power loss. The device also has a high current leakage capability, making it suitable for high-reliability applications.The device also features a low forward voltage of 0.21V at 4.6A, a high immunity to ESD of 4KV, and an ultra low ESR that increases its efficiency and power loss. In addition, the device has a high breakdown voltage of 600V and is available in a variety of package types.

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