BAS40HMFHT116 Allicdata Electronics
Allicdata Part #:

BAS40HMFHT116TR-ND

Manufacturer Part#:

BAS40HMFHT116

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: AUTOMOTIVE SCHOTTKY BARRIER DIOD
More Detail: Diode Schottky 40V 120mA (DC) Surface Mount SSD3
DataSheet: BAS40HMFHT116 datasheetBAS40HMFHT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01591
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Description

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BAS40HMFHT116 is a new type of diode made from a four layer structure, which is used to provide a current “clamping” effect. This diode can be used in a variety of applications such as over-voltage protection and in AC/DC power supplies. The BAS40HMFHT116 is a fast-switching, low leakage diode, which can be used in silicon and gallium arsenide transistors to tailor the areas of junction capacitance. This type of diode is also useful in low-frequency single ended applications.

The BAS40HMFHT116 belongs to the group of single diodes which are used to control the conduction of a single current flow in one direction. Single diodes are typically found in electronic circuits, and are used to protect components such as transistors from over-currents. The BAS40HMFHT116 is designed to provide better current conduction than other single diodes, and its fast-switching capability makes it the preferred choice for high-frequency applications.

The working principle of the BAS40HMFHT116 is based on the junction capacitance effect. The junction capacitance is the ability of the diode to store the electrical charge which results from the flow of current. The junction capacitance can be manipulated by changing the doping of the silicon or gallium arsenide in the semiconductor PN junction. This allows the electrical charges to be stored and released to create a current effect.

The BAS40HMFHT116 utilizes this effect in order to provide an over-voltage protection to the circuit it is connected to. In this application, the diode is used in conjunction with a transistor in order to limit the voltage. The transistor is the primary switch, and the diode is used to protect the transistor from over-voltage situations. When the over-voltage condition is detected, the diode will limit the charge passing through the transistor and protect it from being damaged. The BAS40HMFHT116 is capable of switching on and off in a very short time frame, making it ideal for this kind of application.

The BAS40HMFHT116 is also ideal for use in AC/DC power supplies. In this application, the diode is used to control the flow of current when the voltage changes. The diode will be used to control the direction and magnitude of the current, allowing it to be tailored to the desired level. This makes it useful for providing a steady power source for sensitive electronic components.

In addition to its use as an over-voltage protection, the BAS40HMFHT116 has also been found to be useful in low-frequency single ended applications. In these applications, the diode is used to ensure that one side of the circuit is connected to the other, making it impossible for electrical noise to be introduced into the system. This makes the diode ideal for applications such as audio equipment, where a clean signal is needed.

The BAS40HMFHT116 is a versatile diode, which can be used in a wide range of applications. It has a fast switching time and a low-leakage characteristic, making it ideal for high-frequency applications, as well as low-frequency single-ended applications. The diode\'s junction capacitance can also be tailored by changing the doping of the silicon or gallium arsenide, allowing the current to be limited. Ultimately, the BAS40HMFHT116 is an invaluable tool for any engineer who is looking for an efficient, dependable diode.

The specific data is subject to PDF, and the above content is for reference

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