Allicdata Part #: | 1727-2893-2-ND |
Manufacturer Part#: |
BAS516,115 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE GEN PURP 100V 250MA SOD523 |
More Detail: | Diode Standard 100V 250mA (DC) Surface Mount SOD-5... |
DataSheet: | BAS516,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02373 |
6000 +: | $ 0.02064 |
15000 +: | $ 0.01755 |
30000 +: | $ 0.01651 |
75000 +: | $ 0.01548 |
150000 +: | $ 0.01376 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 500nA @ 80V |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | SOD-523 |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS516 |
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The BAS516,115 is an ultra-fast power rectifier diode, commonly used in the fields of wireless communication, power supplies, DC/DC converters, and other high power and high frequency power conversion applications. The diode is produced with a proprietary technology, enabling an ultrafast avalanche breakdown time of 3.2 ns, an operating temperature range from -40°C to 125°C, and an ultra-low voltage drop of 0.35 volts. Moreover, it provides a high reverse recovery charge of 33.6 uC and good thermal stability.
The device has a PN junction and is formed on a silicon epitaxial substrate, creating a simple and compact rectifier diode. Its goal is to reduce the losses caused by the reverse current and the voltage drop across the diode. This makes it an ideal solution for applications in high frequency, switching power supplies and high power switching circuits. It also features a low impedance junction to minimize charge loss and capacitance, making it well suited for energy-consuming high-frequency switching applications.
In its basic function, the BAS516,115 acts as a one-way electrical switch. When the voltage across its terminals is positive, the diode conducts electricity, allowing electric current to flow in one direction. When the voltage is negative, it blocks electricity and does not allow electric current to flow further. This is achieved by the design of the PN junction, which has a higher electrical potential that maintains electric current in one direction.
The most notable feature of the BAS516,115 is its ultrafast switching speed, due to its avalanche breakdown time. This is a key factor when dealing with switching power circuits, as the diode must be able to switch within the brief range of time when the circuit needs to be changed between two states. In other words, the diode must be able to switch very quickly, and this is what the BAS516,115 was designed for. The ultrafast switching speed also reduces power dissipation and increases the lifetime of the device.
The BAS516,115 is a single power rectifier diode, which can be used in a variety of circuit designs. It can be used to build low-power linear circuits such as battery chargers and mobile phone chargers. It can also be used as a high power switching diode, used to implement power conversion solutions such as buck and boost converters. The diode can also be used to improve the overall efficiency of LED driver and motor drives, making them more energy efficient.
The BAS516,115 is a high-performance power rectifier diode, providing superior switching capabilities and low power dissipation. Its avalanche breakdown time allows for the fastest switching speeds, while its low voltage drop reduces power dissipation and improves energy efficiency. Furthermore, its low impedance junction reduces charge loss and capacitance while its high reverse recovery charge increases the lifetime of the device. All these factors make the BAS516,115 an ideal choice for a wide range of power conversion applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS516,115 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS516,135 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS516,315 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS521LP-7 | Diodes Incor... | 0.05 $ | 192000 | DIODE GEN PURP 325V 400MA... |
BAS581-02V-V-G-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE SCHOTTKY 40V 200MA ... |
BAS521Q-13 | Diodes Incor... | 0.05 $ | 1000 | DIODE GEN PURP 300V 250MA... |
BAS56,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 60V 200MA ... |
BAS56,235 | Nexperia USA... | 0.03 $ | 30000 | DIODE ARRAY GP 60V 200MA ... |
BAS516-TP | Micro Commer... | -- | 24000 | DIODE GEN PURP 75V 250MA ... |
BAS56 TR | Central Semi... | 0.0 $ | 1000 | DIODE SWITCHING DUAL SOT1... |
BAS516,L3F | Toshiba Semi... | 0.02 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS516,H3F | Toshiba Semi... | 0.02 $ | 1000 | DIODE GEN PURP 100V 250MA... |
BAS5202VH6433XTMA1 | Infineon Tec... | 0.06 $ | 1000 | DIODE SCHOTTKY 45V 750MA ... |
BAS521BF | Nexperia USA... | 0.03 $ | 1000 | BAS521B/SOD523/SC-79Diode... |
BAS521BX | Nexperia USA... | 0.04 $ | 1000 | BAS521B/SOD523/SC-79Diode... |
BAS521,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE GEN PURP 300V 250MA... |
BAS521,135 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 300V 250MA... |
BAS521,315 | Nexperia USA... | 0.04 $ | 1000 | DIODE GEN PURP 300V 250MA... |
BAS5202VH6327XTSA1 | Infineon Tec... | 0.07 $ | 264000 | DIODE SCHOTTKY 45V 750MA ... |
BAS521-7 | Diodes Incor... | -- | 54000 | DIODE GEN PURP 300V 250MA... |
BAS56 BK | Central Semi... | 0.0 $ | 1000 | DIODE SWITCHING DUAL SOT1... |
BAS521LPQ-7B | Diodes Incor... | 0.06 $ | 1000 | DIODE GP 325V 400MA X1-DF... |
BAS5202VE6127XT | Infineon Tec... | 0.0 $ | 1000 | DIODE SCHOTTKY 45V 750MA ... |
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