Allicdata Part #: | BAS516L3F-ND |
Manufacturer Part#: |
BAS516,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | DIODE GEN PURP 100V 250MA ESC |
More Detail: | Diode Standard 100V 250mA Surface Mount ESC |
DataSheet: | BAS516,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01826 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 250mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 3ns |
Current - Reverse Leakage @ Vr: | 200nA @ 80V |
Capacitance @ Vr, F: | 0.35pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | ESC |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are an integral part of modern electronics, and rectifiers are used to convert AC (alternating current) to DC (direct current). The BAS516, L3F is a single rectifier that uses PN junction technology to provide high levels of rectification efficiency. This device features low forward voltage drop and is designed to be used in applications where voltage drops need to be minimized.The BAS516, L3F is a popular rectifier diode due to its high efficiency and low voltage drop characteristics. The device can be used in a variety of circuit applications. It is commonly used in high power DC motor drive circuits, DC to AC inverter circuits and general purpose rectification. It can also be used in linear power supply applications, voltage conversion and polarity reversing. The BAS516, L3F rectifier is constructed with a PN junction. This junction is created by a single semiconductor material that has been doped with impurities to form P and N regions. When a bias voltage is applied across the junction, the mobile charge carriers in the N region of the junction will cross over and the number of carriers in the P region will increase. This results in the junction being forward biased and the device will conduct current. When the current flows through forward bias, it is rectified, meaning it is only allowed to flow in one direction. This is due to the depletion zone at the junction, which is formed when the mobile charge carriers cross over the junction. The depletion zone acts as a barrier and prevents current from flowing in the reverse direction. This makes the BAS516, L3F a perfect choice for applications that need efficient rectification. The BAS516, L3F is also designed for use in applications with low-voltage drops. Since the PN junction creates a significantly lower forward voltage drop compared to conventional rectifier technologies, such as silicon carbide or selenium, it makes the BAS516, L3F an ideal solution for these types of applications. Overall, the BAS516, L3F is a single rectifier diode with low forward voltage drop and high rectification efficiency. It is designed for use in a variety of circuit applications, such as DC motor drive circuits, inverters, power supplies, and polarity-reversing circuits. It can provide efficient rectification with a low voltage drop, making it an excellent choice for low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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