BAS521,315 Allicdata Electronics
Allicdata Part #:

1727-7357-2-ND

Manufacturer Part#:

BAS521,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE GEN PURP 300V 250MA SOD523
More Detail: Diode Standard 300V 250mA (DC) Surface Mount SOD-5...
DataSheet: BAS521,315 datasheetBAS521,315 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.02977
16000 +: $ 0.02530
24000 +: $ 0.02381
56000 +: $ 0.02233
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 150nA @ 250V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Base Part Number: BAS521
Description

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Diodes are simple, two-wire devices that control the direction of current in a circuit. While their primary purpose is to allow current to flow in one direction, they are also commonly used as a switch in a circuit. The BAS521, 315 is a type of diode, specifically a rectifying diode, that is used in a variety of applications. This article will discuss the application fields and working principles of BAS521, 315 diodes.

The BAS521, 315 is an ultra-fast recovery, planar epitaxial rectifying diode. Its peak repetitive reverse voltage is 200 Volts, and its continuous forward current is 5 Amps. The device is used in applications requiring high current surges, such as switching power supplies, switch mode circuits, and voltage regulator modules. Additionally, it is ideal for high frequency rectification and medical equipment applications.

The BAS521, 315 diode\'s rectifying action is based on the P-N junction. In a forward-biased diode (i.e., when the anode is connected to the positive terminal of a power source, and the cathode is connected to the negative terminal), a minority charge carrier diffusion occurs. This diffusion causes a small current to flow through the junction, producing a voltage drop across it. With an increasing amount of forward bias, the current increases, and the junction behaves like a closed switch.

When the diode is reversed biased, no majority or minority charge carriers are exchanged, and therefore no current flows through the junction. The junction behaves like an open switch, preventing current from flowing in the reverse direction. This is known as the diode\'s reverse-biased behavior, which is essential for its rectifying properties.

The ultra-fast recovery of the BAS521, 315 diode is due to its planar epitaxial construction. This type of construction uses a thin layer of epoxy-silicon material on top of the P-N junction, which increases the speed with which it can turn from on to off (i.e., from a conducting to a blocking state). This is due to the increased current density in the very thin epitaxial layer, which accelerates the transition times.

In addition to the ultra-fast recovery characteristics, the planar epitaxial construction also helps to reduce the output capacitance of the device. This, in turn, reduces the amount of switching losses, which can help increase efficiency in certain applications. Additionally, the planar construction also increases the current-carrying capacity of the device.

The BAS521,315 rectifying diode can be found in a variety of applications, ranging from switching power supplies, rectifying circuits, and voltage regulators to medical applications. Its ultra-fast recovery and planar construction enable it to handle high currents and large surges, and its low output capacitance ensures an efficient operation. Thus, it is a versatile and reliable diode for a variety of electrical and electronic applications.

The specific data is subject to PDF, and the above content is for reference

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