Allicdata Part #: | BAV20W-FDITR-ND |
Manufacturer Part#: |
BAV20W-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 150V 200MA SOD123 |
More Detail: | Diode Standard 150V 200mA Surface Mount SOD-123 |
DataSheet: | BAV20W-7-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 150V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | BAV20W |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BAV20W-7-F application field and working principle
BAV20W-7-F devices belong to the family of Single Rectifiers diodes. They are used for several applications such as power detector and switch, rectifiers and have also some general purpose usage. These devices are designed to control and provide sign reversal protection.
The common feature of all Single Rectifiers diodes is their ability to allow electrical current to only flow in one direction and prevent it from flowing in the opposite direction. They are typically used in circuits where the direction of the current needs to be controlled and specifically prevent power lines from being damaged. BAV20W-7-F is no exception and its package offers high reliability and compact size for an easy rework for general purpose.
The operating principle of these diodes to allow the current flow in one direction is based on the principle of P-N junction. These diodes are composed of two semiconductor layers, N-type and P-type doped with different impurities. The junction between them is the place where the electrons from the N-type layer move to the P-type layer and become ``locked`` due to the high energy barrier that is created by their intrinsic energy difference. These electrons serve to create a tiny electric charge, called depletion layer, which prevents current flow in the other direction.
The resistance of the diode will vary depending on the supply voltage. This is due to the fact that when a positive voltage is applied, minority carriers flow from the N-type to the P-type, creating a low resistance path, resulting in the current flow through the diode. In the case of reverse bias, the electric field generated by the negative polarity blocks the minority carriers, thus making the diode non-conductive.
The BAV20W-7-F has a maximum power dissipation of 1W. This means that it is capable of dissipating 1 W of power which is determined by the total value of the power supply voltage and the current used. The maximum forward voltage of the device is also important, as this prevents too much voltage from being applied and damage the diode.
In summary, the BAV20W-7-F devices are general purpose, single rectifier diodes used for various applications such as power detector and switch, rectifiers and more. Its operation relies on the basic principle of P-N junction and works in a way that current is only allowed through the device in one direction. Its maximum power dissipation is 1W and a maximum forward voltage of 50V.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAV21 | ON Semicondu... | -- | 11756 | DIODE GEN PURP 250V 200MA... |
BAV20W-E3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 150V 250MA... |
BAV20WS-E3-08 | Vishay Semic... | -- | 12000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-E3-08 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 250MA... |
BAV21W-HE3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 200V 250MA... |
BAV23,235 | Nexperia USA... | 0.03 $ | 1000 | DIODE ARRAY GP 200V 225MA... |
BAV23S | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAV23C-7-F | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 200V 400MA... |
BAV23C-E3-08 | Vishay Semic... | -- | 15000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV21,113 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV20WS-TP | Micro Commer... | -- | 75000 | DIODE GEN PURP 150V 200MA... |
BAV20-TAP | Vishay Semic... | -- | 40000 | DIODE GEN PURP 150V 250MA... |
BAV20-TR | Vishay Semic... | 0.01 $ | 10000 | DIODE GEN PURP 150V 250MA... |
BAV20,113 | Nexperia USA... | 0.02 $ | 30000 | DIODE GEN PURP 150V 250MA... |
BAV20,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV20,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV202-GS08 | Vishay Semic... | -- | 5000 | DIODE GEN PURP 150V 250MA... |
BAV21W-G RHG | Taiwan Semic... | 0.03 $ | 6000 | DIODE GEN PURP 200V 200MA... |
BAV21W RHG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21WS RRG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21-TR | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21WSTR | SMC Diode So... | 0.02 $ | 204000 | DIODE GEN PURP 200V 200MA... |
BAV21WS-TP | Micro Commer... | 0.03 $ | 78000 | DIODE GEN PURP 200V 200MA... |
BAV20W-TP | Micro Commer... | -- | 54000 | DIODE GEN PURP 150V 200MA... |
BAV21W-TP | Micro Commer... | -- | 21000 | DIODE GEN PURP 200V 200MA... |
BAV20W-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 150V 200MA... |
BAV20WS-7-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 150V 200MA... |
BAV23A,215 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 225MA... |
BAV21-T50R | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV202-GS18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21-T50A | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV20WS-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-G3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 200V 250MA... |
BAV21W-G3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 250MA... |
BAV23C-E3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23CVL | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 200V TO236... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...