BAV21WS-7 Allicdata Electronics
Allicdata Part #:

BAV21WSDITR-ND

Manufacturer Part#:

BAV21WS-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 200V 200MA SOD323
More Detail: Diode Standard 200V 200mA Surface Mount SOD-323
DataSheet: BAV21WS-7 datasheetBAV21WS-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: BAV21WS
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BAV21WS-7 is a single-phase rectifier diode. It is designed for use in small-signal and high-speed switching applications. It is ideal for use in a variety of applications such as reverse battery protection, flyback protection, and power supply design. This diode is characterized by low forward voltage drop and fast reverse recovery time.

The BAV21WS-7 is a surface mounted device (SMD) that is available in an SOD-323 package. Its lead frame is made of copper with tin plating and it has a black mold compound material. This diode also has an epoxy package that is flame-retardant and halogen-free. The anode of the diode is marked with a white portion of the package body.

The operating temperature of the BAV21WS-7 is from -65°C to 175°C. The maximum reverse voltage (VRM) is 7V. The maximum peak repetitive forward current (IFRM) is 0.4A with a peak working voltage (VWM) of 6V. It also has a reverse current (IR) of 1 μA at 25°C.

The working principle of the BAV21WS-7 is based on the p–n junction diode which allows current to flow in one direction only. When a forward bias voltage is applied to the diode, the majority and minority carriers in the depletion region exchange energy and become free to move. This results in the formation of a population inversion which causes a depletion region to acquire a negative voltage. As a result, the current flows in the forward direction, and the voltage drop across the diode is minimal. On the other hand, when the reverse bias voltage is applied, the minority carriers are swept out, the depletion region increases and the current flow is blocked.

In the BAV21WS-7, the use of a highly efficient junction design reduces the amount of power required for current flow. This diode is used in automotive, aerospace, telcommunication, consumer, industrial and medical applications. In automotive applications, it can be used as an overvoltage protector, an ignition protect circuit switch, a starter motor, and an alternator rectifier circuit.

In aerospace applications, it can be used as an anti-parasitic spike suppression diode. In telecommunications applications, it is used as a high speed switch, while in consumer and industrial application, it is used as an ESD (Electrostatic Discharge) suppressor. In medical applications, it is used as X-ray protection diodes. Due to the low forward voltage drop of the diode and its fast reverse recovery time, it can be used in all these application fields.

In summary, the BAV21WS-7 is a rectifier diode designed for use in small-signal and high-speed switching applications. It is characterized by low forward voltage drop and fast reverse recovery time, making it suitable for a variety of applications. It is available in an SOD-323 package, with an operating temperature range of -65°C to 175°C, and a maximum reverse voltage (VRM) of 7V.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BAV2" Included word is 40
Part Number Manufacturer Price Quantity Description
BAV21 ON Semicondu... -- 11756 DIODE GEN PURP 250V 200MA...
BAV20W-E3-08 Vishay Semic... 0.04 $ 12000 DIODE GEN PURP 150V 250MA...
BAV20WS-E3-08 Vishay Semic... -- 12000 DIODE GEN PURP 150V 250MA...
BAV21WS-E3-08 Vishay Semic... -- 3000 DIODE GEN PURP 200V 250MA...
BAV21W-HE3-08 Vishay Semic... 0.04 $ 12000 DIODE GEN PURP 200V 250MA...
BAV23,235 Nexperia USA... 0.03 $ 1000 DIODE ARRAY GP 200V 225MA...
BAV23S ON Semicondu... -- 1000 DIODE ARRAY GP 250V 200MA...
BAV23C-7-F Diodes Incor... -- 1000 DIODE ARRAY GP 200V 400MA...
BAV23C-E3-08 Vishay Semic... -- 15000 DIODE ARRAY GP 200V 200MA...
BAV23C-HE3-08 Vishay Semic... 0.05 $ 1000 DIODE ARRAY GP 200V 200MA...
BAV21,113 Nexperia USA... 0.02 $ 1000 DIODE GEN PURP 200V 250MA...
BAV21,133 Nexperia USA... 0.02 $ 1000 DIODE GEN PURP 200V 250MA...
BAV21,143 Nexperia USA... 0.02 $ 1000 DIODE GEN PURP 200V 250MA...
BAV20WS-TP Micro Commer... -- 75000 DIODE GEN PURP 150V 200MA...
BAV20-TAP Vishay Semic... -- 40000 DIODE GEN PURP 150V 250MA...
BAV20-TR Vishay Semic... 0.01 $ 10000 DIODE GEN PURP 150V 250MA...
BAV20,113 Nexperia USA... 0.02 $ 30000 DIODE GEN PURP 150V 250MA...
BAV20,133 Nexperia USA... 0.02 $ 1000 DIODE GEN PURP 150V 250MA...
BAV20,143 Nexperia USA... 0.02 $ 1000 DIODE GEN PURP 150V 250MA...
BAV202-GS08 Vishay Semic... -- 5000 DIODE GEN PURP 150V 250MA...
BAV21W-G RHG Taiwan Semic... 0.03 $ 6000 DIODE GEN PURP 200V 200MA...
BAV21W RHG Taiwan Semic... 0.03 $ 3000 DIODE GEN PURP 250V 200MA...
BAV21WS RRG Taiwan Semic... 0.03 $ 3000 DIODE GEN PURP 250V 200MA...
BAV21-TR Vishay Semic... 0.02 $ 1000 DIODE GEN PURP 200V 250MA...
BAV21WSTR SMC Diode So... 0.02 $ 204000 DIODE GEN PURP 200V 200MA...
BAV21WS-TP Micro Commer... 0.03 $ 78000 DIODE GEN PURP 200V 200MA...
BAV20W-TP Micro Commer... -- 54000 DIODE GEN PURP 150V 200MA...
BAV21W-TP Micro Commer... -- 21000 DIODE GEN PURP 200V 200MA...
BAV20W-7-F Diodes Incor... -- 1000 DIODE GEN PURP 150V 200MA...
BAV20WS-7-F Diodes Incor... -- 12000 DIODE GEN PURP 150V 200MA...
BAV23A,215 Nexperia USA... 0.05 $ 1000 DIODE ARRAY GP 200V 225MA...
BAV21-T50R ON Semicondu... 0.02 $ 1000 DIODE GEN PURP 250V 200MA...
BAV202-GS18 Vishay Semic... 0.02 $ 1000 DIODE GEN PURP 150V 250MA...
BAV21-T50A ON Semicondu... 0.02 $ 1000 DIODE GEN PURP 250V 200MA...
BAV20WS-E3-18 Vishay Semic... 0.03 $ 1000 DIODE GEN PURP 150V 250MA...
BAV21WS-G3-08 Vishay Semic... -- 15000 DIODE GEN PURP 200V 250MA...
BAV21W-G3-08 Vishay Semic... -- 1000 DIODE GEN PURP 200V 250MA...
BAV23C-E3-18 Vishay Semic... 0.04 $ 1000 DIODE ARRAY GP 200V 200MA...
BAV23C-HE3-18 Vishay Semic... 0.04 $ 1000 DIODE ARRAY GP 200V 200MA...
BAV23CVL Nexperia USA... 0.04 $ 1000 DIODE ARRAY GP 200V TO236...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics