BAV21W-TP Discrete Semiconductor Products |
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Allicdata Part #: | BAV21WTPMSTR-ND |
Manufacturer Part#: |
BAV21W-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 200V 200MA SOD123 |
More Detail: | Diode Standard 200V 200mA Surface Mount SOD-123 |
DataSheet: | BAV21W-TP Datasheet/PDF |
Quantity: | 21000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BAV21W |
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A BAV21W-TP is a single rectifier diode designed for general cloning, switching, and reverse-blocking applications. It has a spectral response range of 225 to 1700 nanometers, a peak external electric field strength of 6.5 MV/m, and a threshold voltage of 0.75 volts. It is packaged in a standard SOT-23 package and has an operating temperature range of - 55 to + 175 degrees Celsius.
The BAV21W-TP diode is a single, low-current, low-voltage, silicon rectifier with an enhanced avalanche breakdown. It is designed to achieve improved electrical characteristics over standard single rectifier diodes. The breakdown voltage of the device is 0.75 volts and the maximum forward current is 4 amps. The current carrying capability of the device is 0.1 amp at room temperature and 0.3 amp under reverse-blocking conditions. The operating temperature range is -55 degrees Celsius to + 175 degrees Celsius.
The BAV21W-TP diode is capable of withstanding reverse voltages up to 200 volts and can operate at frequencies up to 500 khz. The device features a wide spectral response range of 225 to 1700 nanometers and a peak external electric field strength of up to 6.5 MV/m. It has a maximum junction temperature of 175 degrees Celsius and an electrical durability of 1,000 cycles.
The BAV21W-TP diode’s working principle is based on the principle of rectification, which is the process of changing alternating current (AC) into direct current (DC). Rectification is achieved when electric current is passed through a diode in the forward direction. The diode allows the current to flow in one direction, while blocking current flow in the opposite direction. This process results in a unidirectional output of electric current.
The diode’s most common application is in switchmode power supplies, where it facilitates the commutation of current in a switching circuit. It can also be used in electric motors and other DC devices to rectify the AC power and convert it to DC. The device is also used in many RF circuits such as frequency multipliers, amplifiers, and oscillators.
In conclusion, the BAV21W-TP is a single rectifier diode used for general cloning, switching, and reverse-blocking applications. It features excellent electrical characteristics with a breakdown voltage of 0.75 volts and a maximum forward current of 4 amps. The device is packaged in a standard SOT-23 and operates within a wide temperature range of -55 to + 175 degrees Celsius. The diode is capable of withstanding reverse voltages up to 200 volts and can operate at frequencies up to 500 khz. The device’s working principle is based on the principle of rectification, which is the process of changing AC into DC.
The specific data is subject to PDF, and the above content is for reference
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