Allicdata Part #: | BAV21-T50RTR-ND |
Manufacturer Part#: |
BAV21-T50R |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 250V 200MA DO35 |
More Detail: | Diode Standard 250V 200mA Through Hole DO-35 |
DataSheet: | BAV21-T50R Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01680 |
30000 +: | $ 0.01512 |
50000 +: | $ 0.01344 |
100000 +: | $ 0.01260 |
250000 +: | $ 0.01120 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 250V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | BAV21 |
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Diodes - Rectifiers - Single: BAV21-T50R Application Field and Working Principle
The BAV21-T50R is a high power rectifier diode. It is a small signal, fast recovery diode that is used in a variety of applications such as voltage regulating, rectifying and surge protecting. This diode has a robust design that allows it to function in a wide temperature range.
The BAV21-T50R is constructed of a glass-epoxy case and a zinc oxide passivation layer. This gives the diode a long life and excellent performance in high-temperature environments. The device is available in a DO-204 package, making it easy to implement into a wide variety of applications.
In terms of application, the BAV21-T50R is typically used in voltage regulating, rectifying, surge protection, and switching applications. The device provides a fast recovery time and a low forward voltage drop. It can also be used in applications that require high voltage tolerance and reverse bias protection. The device is also used in high-frequency functions such as radio frequency interference suppression and EMI solutions.
The working principle of the BAV21-T50R is that of a basic rectifier diode. It has two terminals, known as anode and cathode. The diode conducts current only when there is a forward bias. When a forward bias is applied, the diode allows the current to pass through it. On the other hand, when a reverse bias is applied, the diode prevents the current from passing through it.
The BAV21-T50R is an efficient and reliable rectifier diode. It provides a fast recovery time and a low forward voltage drop. It can also withstand high temperatures and is available in a DO-204 package. This makes it a versatile device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAV21 | ON Semicondu... | -- | 11756 | DIODE GEN PURP 250V 200MA... |
BAV20W-E3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 150V 250MA... |
BAV20WS-E3-08 | Vishay Semic... | -- | 12000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-E3-08 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 250MA... |
BAV21W-HE3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 200V 250MA... |
BAV23,235 | Nexperia USA... | 0.03 $ | 1000 | DIODE ARRAY GP 200V 225MA... |
BAV23S | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAV23C-7-F | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 200V 400MA... |
BAV23C-E3-08 | Vishay Semic... | -- | 15000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV21,113 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV20WS-TP | Micro Commer... | -- | 75000 | DIODE GEN PURP 150V 200MA... |
BAV20-TAP | Vishay Semic... | -- | 40000 | DIODE GEN PURP 150V 250MA... |
BAV20-TR | Vishay Semic... | 0.01 $ | 10000 | DIODE GEN PURP 150V 250MA... |
BAV20,113 | Nexperia USA... | 0.02 $ | 30000 | DIODE GEN PURP 150V 250MA... |
BAV20,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV20,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV202-GS08 | Vishay Semic... | -- | 5000 | DIODE GEN PURP 150V 250MA... |
BAV21W-G RHG | Taiwan Semic... | 0.03 $ | 6000 | DIODE GEN PURP 200V 200MA... |
BAV21W RHG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21WS RRG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21-TR | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21WSTR | SMC Diode So... | 0.02 $ | 204000 | DIODE GEN PURP 200V 200MA... |
BAV21WS-TP | Micro Commer... | 0.03 $ | 78000 | DIODE GEN PURP 200V 200MA... |
BAV20W-TP | Micro Commer... | -- | 54000 | DIODE GEN PURP 150V 200MA... |
BAV21W-TP | Micro Commer... | -- | 21000 | DIODE GEN PURP 200V 200MA... |
BAV20W-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 150V 200MA... |
BAV20WS-7-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 150V 200MA... |
BAV23A,215 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 225MA... |
BAV21-T50R | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV202-GS18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21-T50A | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV20WS-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-G3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 200V 250MA... |
BAV21W-G3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 250MA... |
BAV23C-E3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23CVL | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 200V TO236... |
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