Allicdata Part #: | BAV23CDITR-ND |
Manufacturer Part#: |
BAV23C-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ARRAY GP 200V 400MA SOT23 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 40... |
DataSheet: | BAV23C-7 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 400mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAV23C |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
BAV23C-7 is a diode rectifier array product that is used in junction, avalanche and low dynamic impedance applications. It offers superior performance because of its Internal protection, Integrated electrical discharge protection and enhanced thermal characteristics. This product is ideal for use in automotive as well as industrial and consumer electronics applications.Application & Working Principle
The BAV23C-7 can be used in junction and avalanche application due to its many advantages. A junction is a region of the diode where the junction potential is at it’s lowest, allowing current to flow between the layers of the diode. The diode has a negative temperature coefficient, meaning that its resistance value decreases as the temperature increases. This ensures a more stable current in the diode, making it suitable for junction application.In avalanche application, the electrons in the junction region easily gain enough energy to break down the barrier potential, creating an avalanche of current. The avalanche of current causes an increase in the diode’s temperature which leads to an increase in the resistance of the diode. The BAV23C-7 has its own internal protective layers which prevent thermal runaway in the avalanche application, resulting in superior performance in comparison to ordinary diodes. The BAV23C-7 also has enhanced thermal characteristics which help maintain the junction potential of the diode at low temperatures, giving it its low dynamic impedance advantage. This leads to improved thermal management when compared to other diodes.The BAV23C-7 is also created with improved electrical discharge protection. It is designed to withstand high voltage transient electrical discharges better than most other diodes. This ensures better long-term performance and reliability in the diode array.Conclusion
In conclusion, the BAV23C-7 is a superior diode rectifier array product with many benefits such as Enhanced thermal characteristics, internal protection, integrated electrical discharge protection, and low dynamic impedance. It is a suitable choice for various automotive, industrial and consumer electronics applications due to its superior performance.The specific data is subject to PDF, and the above content is for reference
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