Allicdata Part #: | 1655-1415-2-ND |
Manufacturer Part#: |
BAV21WSTR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GEN PURP 200V 200MA SOD323 |
More Detail: | Diode Standard 200V 200mA Surface Mount SOD-323 |
DataSheet: | BAV21WSTR Datasheet/PDF |
Quantity: | 204000 |
3000 +: | $ 0.02179 |
6000 +: | $ 0.01966 |
15000 +: | $ 0.01709 |
30000 +: | $ 0.01538 |
75000 +: | $ 0.01368 |
150000 +: | $ 0.01140 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 100V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -65°C ~ 150°C |
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Diodes are an important component of electrical circuits, and rectifiers are a specific kind of diode. The BAV21WSTR is a single rectifying diode from NXP Semiconductors, capable of operating at high power levels. This device can be used in a wide range of applications, from consumer electronics to automotive designs.
The BAV21WSTR is an isolated package SMD (Surface Mount Device) diode designed for switchers, converters, inverters, and rectifiers. It has a wide junction temperature range of -55°C to +150°C, and a maximum repetitive reverse voltage of 75V. The maximum power dissipation is 3W, with a forward current of 3A and peak forward surge current of 5A. It features a glass passivated junction, low forward voltage drop, and high current capability.
The working principle of the BAV21WSTR is based on the PN junction diode. In its simplest form, a diode device is composed of two layers of a semiconductor material that have been doped with different impurities. In a PN junction diode, this doping creates a depletion zone near the junction, which acts as a barrier to current flow. This diode can be used as either a rectifying diode or a forward-biased diode, by applying the appropriate voltage across the two terminals.
When used as a rectifying diode, the BAV21WSTR conducts current in one direction, allowing the current to flow from one terminal to the other, while blocking current flow in the opposite direction. The direction in which the current flows depends on the polarity of the applied voltage across the diode. When the P-type layer is positively charged, the diode is in its forward-bias state and allows current to flow. When the N-type layer is negatively charged, the diode is in its reverse-bias state and blocks current flow.
The BAV21WSTR can be used in a wide range of applications, such as in power supplies, DC-DC converters, inverters, automotive designs, and more. It can also be used in parallel combinations with other components to provide higher levels of current. It is a cost-effective, high-performance device that can be used in both commercial and industrial applications.
The BAV21WSTR is a reliable, high-voltage, high-power rectifying diode, designed for a wide range of commercial and industrial applications. It has a wide junction temperature range and low forward voltage drop, making it an ideal choice for powering devices that require higher levels of current. The working principle of the device is based on the PN junction diode, making it versatile and easy to use.
The specific data is subject to PDF, and the above content is for reference
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BAV23C-HE3-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV21,113 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
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BAV20-TR | Vishay Semic... | 0.01 $ | 10000 | DIODE GEN PURP 150V 250MA... |
BAV20,113 | Nexperia USA... | 0.02 $ | 30000 | DIODE GEN PURP 150V 250MA... |
BAV20,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
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BAV21W-G RHG | Taiwan Semic... | 0.03 $ | 6000 | DIODE GEN PURP 200V 200MA... |
BAV21W RHG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21WS RRG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21-TR | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21WSTR | SMC Diode So... | 0.02 $ | 204000 | DIODE GEN PURP 200V 200MA... |
BAV21WS-TP | Micro Commer... | 0.03 $ | 78000 | DIODE GEN PURP 200V 200MA... |
BAV20W-TP | Micro Commer... | -- | 54000 | DIODE GEN PURP 150V 200MA... |
BAV21W-TP | Micro Commer... | -- | 21000 | DIODE GEN PURP 200V 200MA... |
BAV20W-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 150V 200MA... |
BAV20WS-7-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 150V 200MA... |
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BAV202-GS18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
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BAV20WS-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 150V 250MA... |
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BAV23C-E3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
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