BAV70_D87Z

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Diodes - Rectifiers - Arrays: BAV70_D87Z

BAV70_D87Z is an epitaxial planar Diode Array chip. These diodes are fabricated on a monolithic integrated circuit in which the p-type and n-type semiconductor regions are deposited onto the same die. The diodes are of the avalanche breakdown type and designed using a 90 degree multi-plane lithographic process. It is available in two different packages, namely the 8-Pin single-in-line (SIT) and a 16-Pin side-by-side (SBS).

The BAV70_D87Z provides efficient protection of terminals on high-side devices such as DC-DC converters, voltage regulators and motor controllers. The array offers low series resistance for fast current rise time and low junction capacitance for optimum ESD protection. It has excellent thermal characteristics, allowing for an on-state current limit of 3.2A, with a corresponding maximum power dissipation of 5.6W.

The BAV70_D87Z has several advantages over traditional avalanche breakdown diodes, such as improved on-state current rate and improved transient response time. In addition, the 8-pin SIT package allows for space saving and cost effective solutions. This makes it ideal for applications such as DC-DC converters, voltage regulators, motor controllers, micro-processors, and power line protection.

The working principle of the BAV70_D87Z is based on the reverse breakdown voltage at which the avalanche breakdown occurs. A forward bias applied on the circuit’s p-type or n-type region creates an electric field in the junction region. At a certain voltage level, the electrons and holes in the junction region gain enough energy to overcome the polarization of the junction barrier, and the diode enters the avalanche breakdown. During this process, a large amount of current is released through the diode, which causes it to act as a short circuit, protecting the device from overvoltage.

To ensure maximum protection, it is important to have a large reverse recovery time for the avalanche breakdown process. This is provided by the BAV70_D87Z, by increasing the reverse recovery current and decreasing the reverse recovery time. This allows the device to provide fast and precise protection from overvoltage.

In summary, the BAV70_D87Z offers improved on-state current rate and transient response time, allowing for efficient ESD protection in a cost effective and space saving package. It allows for fast current rise time and low power dissipation, enabling the device to be used in a variety of applications in the automotive, industrial and consumer markets.

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