BAV74,235 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2085-2-ND |
Manufacturer Part#: |
BAV74,235 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ARRAY GP 50V 215MA SOT23 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 50V 215... |
DataSheet: | BAV74,235 Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.01217 |
30000 +: | $ 0.01096 |
50000 +: | $ 0.00974 |
100000 +: | $ 0.00913 |
250000 +: | $ 0.00811 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io) (per Diode): | 215mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 50V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BAV74 |
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The BAV74,235 is a diode array specifically designed for attenuation of EMI/RFI noise in high speed digital and mixed signal circuits. The device is a dual channel common-cathode array with individual pins for each channel. With an operating temperature range from -40 to +125 degrees Celsius, the device can withstand extreme environmental conditions.
It is constructed with a planar passivated silicon surface-mount diode array, capable of withstanding a high voltage of up to 155 volts. The device features fast reverse recovery, low capacitance and low differential capacitance between channels. It also produces negligible Reverse Recovery Time Interference (RRTI).
The dual-channel, common-cathode design of the BAV74,235 array optimizes the number of diodes necessary in the application. In order to reduce the inductance associated with the parasitic capacitance, the device has individual pins for each channel. The device is specifically designed for operating frequencies up to 200MHz, allowing for a 1dB reduction of EMI/RFI for a wide range of applications. Additionally, it features low junction capacitance and low internal series resistance.
The BAV74,235 diode array is used in a variety of applications, such as RF signal conditioning, antennas, cellular phones, wireless communications, CDMA and Bluetooth enabled products, radio frequency (RF) power amplifiers and telecommunications products. It is also used in automotive systems, such as power supplies, fuel injection systems and airbags. Additionally, the device is often used in high frequency analog applications, including switched-mode power supplies (SMPS), DC-DC converters and analogue-to-digital converters.
The working principle of the BAV74,235 diode array is the same as for a normal diode: when the forward bias is applied, electrons are pushed from the cathode to the anode and the device conducts current. The maximum amount of current is controlled by the size of the resistor in the circuit. In reverse bias, the electrons and holes recombine, so there is no current. This is how the diode array works to reduce EMI/RFI noise in high speed digital circuits. The device acts as a filter, allowing signals to pass through while blocking any disruptive noise. Furthermore, the low capacitance of the device ensures minimal signal degradation.
In conclusion, the BAV74,235 diode array is an effective and reliable solution for EMI/RFI noise reduction in a wide range of applications. Its dual-channel, common-cathode design provides a space saving solution and the device’s fast reverse recovery, low capacitance and low differential capacitance make it suitable for high frequency analog applications. The device functions by acting as a filter, allowing signals to pass through while blocking any disruptive noise.
The specific data is subject to PDF, and the above content is for reference
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