Allicdata Part #: | BAV70HMFHT116TR-ND |
Manufacturer Part#: |
BAV70HMFHT116 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | HIGH RELIABILITY AND SMALL MOLD |
More Detail: | Diode Array 1 Pair Common Cathode Standard 80V 215... |
DataSheet: | BAV70HMFHT116 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02474 |
6000 +: | $ 0.02231 |
15000 +: | $ 0.01940 |
30000 +: | $ 0.01746 |
75000 +: | $ 0.01552 |
150000 +: | $ 0.01290 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 215mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 500nA @ 80V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SSD3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAV70HMFHT116 is a diode array specifically designed for high speed switching. It consists of six independent channels in a surface mount rectangular package. The BAV70HMFHT116 offers an ideal solution for applications such as RF switching, signal protection, and noise reduction.
The BAV70HMFHT116 has a maximum peak repetitive reverse voltage of 55V, a maximum forward current rating of 200mA per channel, and a maximum peak power dissipation of 600mW per channel. The device has an average forward voltage drop of 95mV and an average output capacitance of 8.2pF. It provides high speed switching with propagation delays as low as 55ns.
The BAV70HMFHT116 is a monolithic 2D diode array with a rectifier bridge configuration. It consists of six ultra-fast switching diodes that are connected in pairs with their anodes connected to the cathode of the other diode in the pair. Each diode in the pair has a forward voltage rating of 55V and a breakdown voltage of 65V. The diodes are connected in a "bridge" format, allowing for two directional current flow.
The BAV70HMFHT116 has a wide range of applications, such as in RF switching, high speed signal protection, and noise reduction. The device is capable of providing ultra-fast switching speeds which make it suitable for pulse modulation and pulse width modulation applications where high speeds and accuracy are required. The device also has low forward voltage, high forward current capacity, and low capacitance output characteristics, making it ideal for use in high-frequency and high voltage applications.
Additionally, the device has a number of features that make it highly reliable and suitable for use in harsh environmental conditions. The device has a hermetic seal which makes it highly resistant to moisture and dust. It also has an extremely low thermal resistance to external components, allowing for efficient heat dissipation during high current situations.
In conclusion, the BAV70HMFHT116 is a versatile and highly reliable diode array which is specifically designed for high speed switching applications. It provides excellent heat dissipation and protection against moisture and dust. The device has an average forward voltage drop of 95mV, an average output capacitance of 8.2pF, and a maximum forward current rating of 200mA per channel. The device’s independence and low thermal resistance make it suitable for applications such as RF switching, signal protection, and noise reduction.
The specific data is subject to PDF, and the above content is for reference
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