BC237BZL1G Allicdata Electronics
Allicdata Part #:

BC237BZL1G-ND

Manufacturer Part#:

BC237BZL1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 200MHz 350m...
DataSheet: BC237BZL1G datasheetBC237BZL1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC237
Description

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The BC237BZL1G is a Single Bipolar Transistor (BJT). It is a general-purpose, low current, low voltage, small signal transistor. It is used in a wide range of applications, from low-noise amplifiers and low-power audio circuits to interfacing and LNA circuits for TVs and radios. The BC237BZL1G has a wide range of features that make it ideal for a variety of applications.

The BC237BZL1G is a NPN transistor that has a collector-emitter breakdown voltage of -65V and can handle a maximum collector current of 200mA. It has a maximum current gain of 1100 and a maximum collector dissipation of 250mW. The BC237BZL1G is constructed with a single-emitter configuration that allows it to be used in a wide range of applications. Additionally, the device is constructed with a general-purpose bipolar junction transistor that allows it to perform a variety of different operations at different frequencies.

The BC237BZL1G\'s working principle is based on two transistors operating in series, where one transistor is the base and the other is the collector-emitter. The transistor consists of two junctions, one P-type and one N-type. Depending on the voltage applied to the base junction, the current allowed to flow through the collector-emitter junction will change. When the base voltage is low, the collector-emitter junction is partially blocked and the current that can flow through it is limited. When the base voltage is high, the collector-emitter junction is more open and allows more current to flow through it.

The BC237BZL1G is used in a variety of applications, ranging from low-noise amplifiers and low-power audio circuits to interfacing and LNA circuits for TVs and radios. The device is also often used in switch-mode power supplies, DC-DC converters, diode rectifiers, phase shifters, and oscillators. Additionally, the transistor can be used in analog applications such as signal conditioning and gain control.

The BC237BZL1G is a low-cost, general-purpose bipolar transistor that is an excellent choice for a wide range of applications. It has a wide range of features and a wide operating temperature range. It is an easy-to-use device that is ideal for simple applications, such as low-noise amplifiers and low-power audio circuits. It also has the capability to handle more demanding applications, such as interfacing and LNA circuits for TVs and radios.

The specific data is subject to PDF, and the above content is for reference

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