BC238TF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 5V
Power - Max:	500mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BC238

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Introduction

BC238TF is a high power transistor that belongs to the single Bipolar (BJT) Transistor family. It has become a very popular device among commercial components due to its reliability, wide range of applications, and high performance characteristics.

Principle of Operation

BC238TF is a bipolar transistor and utilizes electrons as the main conducting mechanism. It is typically used in common emitter configuration, which allows current to flow between the emitter and collector and be controlled by the base current. This is how BC238TF amplifies the input current, resulting in larger output current due to the current amplification factor (β).

Device Construction

BC238TF is constructed with a two-layer semiconductor structure, consisting of a layer of P type Silicon (Si) and a layer of N type Silicon. The junction between the two layers is known as the base region and serves as the control terminal. The emitter and collector regions are formed by diffusing either a p-type or n-type conductivity impurity into the silicon layer.

BC238TF Application Fields

BC238TF can be used for a wide variety of purposes depending on the application. It can be used as a switch or an amplifier for audio, radio frequency (RF), and oscillators for low-power switch-mode power supplies. It can also be used in power supplies for high power applications, as well as in analog circuits, bridges and converters.

Advantages

BC238TF offers several advantages when compared with other available transistors. First and foremost, it has greater current gain compared to other transistors in its range. This is due to its optimized design structure and its two-layer silicon design. Additionally, its lower power dissipation allows the device to remain cool even under heavy load conditions. It has greater operating frequency than other BJTs, making it an ideal choice for high frequency applications.

Conclusion

BC238TF is an extremely versatile device that offers a wide range of applications, from low-power to high-power applications. Its optimized design structure and two-layer silicon design ensure that it has higher current gain, lower power dissipation, and higher operating frequency than other transistors in its range. With it, many more possibilities become available.

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