BC239CBU Allicdata Electronics
Allicdata Part #:

BC239CBU-ND

Manufacturer Part#:

BC239CBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 100mA 250MHz 500m...
DataSheet: BC239CBU datasheetBC239CBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC239
Description

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BC239CBU is a general-purpose small signal PNP bipolar junction transistor (BJT) for switching and amplifier applications. It features a breakdown voltage of 60V, a maximum collector current of 800mA, a gain bandwidth product of 1MHz and a total power dissipation of 250mW. The SOT-23 type package makes it ideal for use in low power, space-constrained circuits. BC239CBU can be used in a variety of products ranging from audio amplifiers to power supplies, microcontrollers to amplifiers.

Application Field

BC239CBU is a versatile transistor for switching and amplifier applications. It can be used to generate high voltages, control circuits, amplify signals, drive motors, and more. The surface-mount package makes it easy to mount in tight spaces, and its breakdown voltage of 60V makes it suitable for high-voltage applications. It can also be used to construct simple circuits or as a low-noise amplifier when connected to an external frequency-selective device, such as a filter. It has a wide range of uses in communication, automotive, energy, industrial, medical, and other applications.

Working Principle

The working principle of BC239CBU involves the application of a small electric current at the base (B) which controls a larger current flowing from the collector (C) to the emitter (E), thereby controlling departures of the collector current from its temperature-dependent quiescent value. This flow of current depending on the input current is called current gain. The current gain of the BC239CBU is typically between 100 and 200.

The BC239CBU utilizes a PN junction to conduct majority current. Electrons from n-type semiconductor flow through the p-type region to the emitter and are released as electron-hole pairs. The holes from the p-type material combine with electrons from the collector and move towards the n-type material. This process is called minority carrier injection.

The gain of the BC239CBU can be increased by adding a base resistor (RL) to increase the base current, thereby increasing the output current. Similarly, in AC circuits, the gain of the BC239CBU can be reduced by lowering the source resistance of the device. This allows the transistor to operate at higher frequencies.

The BC239CBU is a versatile device which can be used in a variety of applications. The benefits of using the BC239CBU include its low cost, small size, high voltage breakdown, and high current capability. It can be used for switching and amplifier applications in a wide range of products from audio amplifiers to power supplies, microcontrollers to amplifiers.

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The specific data is subject to PDF, and the above content is for reference

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