Allicdata Part #: | BC238BBU-ND |
Manufacturer Part#: |
BC238BBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 100mA 250MHz 500m... |
DataSheet: | BC238BBU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC238 |
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The BC238BBU transistor is a silicon, NPN bipolar junction transistor. It is located among a range of NPN transistors from NXP Semiconductor, boasting high-switching speed capabilities due to its high-frequency characteristics. As such, the BC238BBU has a wide range of applications, from radios to audio amplifiers to power supplies. The following article will discuss the field of applications for the BC238BBU transistor, as well as the principle behind their operation.
Application Field
The primary application of the BC238BBU transistor lies in its ability to successfully operate at high frequencies without significantly sacrificing switching speed. As such, the BC238BBU can be used in a variety of circuits related to radio communications, including antenna preamplifiers, receivers, transmitters, high-frequency mixers, and radio frequency oscillators. The high speed capability of the BC238BBU makes it suitable for use in audio amplifiers, providing an audible signal with minimal distortion.
The BC238BBU is also well suited to applications related to the regulation of power supplies, such as switching regulators, converters, inverters, and motor control circuits. The BC238BBU can also be used in non-power related circuits, such as pulse generators, integrated circuit clock systems, and computer logic circuits. Finally, the BC238BBU transistor is often found in discrete circuits related to voltage and current regulation.
Working Principle
Bipolar transistors like the BC238BBU depend on the movement of electrons in order to operate. By applying a voltage to the Base of the transistor, electronics are ‘pushed’ from one side of the transistor to the other. This movement of current controls the current at the collector-base connection, which can then control the current at the output terminal. This process is known as current amplification.
The BC238BBU is a NPN transistor, meaning that the Base-emitter junction is forward biased. This type of transistor is designed to maximize current amplification by allowing electrons to pass through the transistor with ease. The voltage at the base is used to control the current flow between the collector and emitter, allowing the transistor to switch between an open state (transistor is OFF) and an closed state (transistor is ON).
The BC238BBU transistor is designed to operate at high frequencies, due to its low capacitance and high current gain. This makes it ideal for applications requiring fast switching speeds, such as audio amplifiers or power supply regulation. It is also capable of handling high power, making it suitable for use in circuits involving radios and similar high-power devices.
Conclusion
The BC238BBU transistor is a high-frequency, NPN bipolar junction transistor that is ideally suited for applications requiring a fast switching speed. These include radio devices such as antenna preamplifiers, mixers, and oscillators, as well as audio amplifiers and power supply regulation. The BC238BBU transistor works by amplifying the base current and controlling the collector-emitter current, switching between an open and closed state depending on the amount of current applied. This high-frequency transistor is capable of handling large amounts of power, allowing it to be used in complex circuitry.
The specific data is subject to PDF, and the above content is for reference
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