Allicdata Part #: | BC239BBU-ND |
Manufacturer Part#: |
BC239BBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 100mA 250MHz 500m... |
DataSheet: | BC239BBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC239 |
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The BC239BBU is a PNP type bipolar junction transistor (BJT) with an extended mutual current gain range. It is considered to be a single transistor, since it has three layers of semiconductor materials, each of which is designated with an arrow in its package. This transistor is often used for applications that require a switch with low base current, such as switching between a direct current source and a load, or between one load and another.
A BJT is an electronic device comprised of two BJT regions, base and collector/emitter. The collector serves to collect and direct current from the base to the emitter, while the base is connected to the control voltage. The relationship between the collector current (Ic) and the base resistor (RB) is what determines the voltage gain of the transistor. When the base voltage increases, the collector current also increases, which enables the transistor to switch in either direction.
The BC239BBU has a low noise figure, making it ideal for applications that require a low noise level such as optical and audio amplifiers. Its low saturation voltage helps reduce power consumption, making it suitable for efficient switching applications. This transistor is manufactured using an advanced epitaxial-base process, which helps ensure high uniformity and stability.
In terms of its working principle, the BC239BBU is an npn type bipolar junction transistor, which, when properly biased, switches from a non-conductive state (called cut-off) to a conductive state (called saturation). In cut-off, no current flows through the base-collector and depending on the voltage applied to the base, the transistor will switch from cut-off to saturation. When in saturation, current flows from the collector-emitter and is limited to the maximum collector current (ICmax).
In terms of its application field, the BC239BBU is suitable for use as a switch, amplifier, current source/sink, or signal processing device. Because of its wide-range current gain and low-noise performance, this transistor is especially suitable for use in radio-frequency (RF) applications such as power switches, oscillators, and amplifiers. This transistor is also a great choice for low-noise applications, such as audio and optical amplifiers, as well as voltage-controlled oscillators.
The BC239BBU is designed to have a wide range of uses and applications, due to its extended mutual current gain range and low noise performance. Its highly stable emitter-base voltage and collector-base voltage provide a reliable choice for applications that require a switch or amplifier with excellent performance.
The specific data is subject to PDF, and the above content is for reference
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