BC32725BU Allicdata Electronics
Allicdata Part #:

BC32725BUFS-ND

Manufacturer Part#:

BC32725BU

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 625m...
DataSheet: BC32725BU datasheetBC32725BU Datasheet/PDF
Quantity: 7693
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 7693Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC327
Description

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BC32725BU application field and working principle

The BC32725BU is a single bipolar junction transistor (BJT) often used in domestic and industrial applications. A BJT is a semiconductor device composed of 3 terminals, usually known as Emitter (E), Base (B) and Collector (C). The BC32725BU is designed to switch or amplify electrical signals, making it ideal for use in power amplification and switching applications.

The BC32725BU has a maximum collector current of up to 450 mA, a maximum operating voltage of 30V, a power dissipation of up to 0.3W, and an average collector current of up to 50mA. It also has a high maximum frequency of up to 1MHz, which makes it suitable for high-speed applications. The typical gain of the BC32725BU is up to 300 depending on the usage conditions.

Working Principle

The BC32725BU works on the principle of biasing. When a DC voltage is applied to the base and emitter terminals of the BJT, it creates a depletion region near the base terminals, thus the BJT is “forward biased”. This depletion region reduces the number of carriers between the emitter and collector, which allows the current from the emitter to arrive at the collector. Hence, the current flows from the collector to the emitter, controlling the current and voltage between the collector-emitter terminals.

When a small signal is applied to the base terminal, it creates a variation in the depletion region, leading to a variation in current from collector to emitter. This is known as a common-emitter amplifier configuration, and is the most commonly used method for signal amplification in BJTs.

Application Fields

The BC32725BU is used in a wide range of applications, including home appliance control, industrial process control, telecommunication, signal amplification and motor control. It is also used in signal processing and signal transmission. Additionally, the BC32725BU is used in power amplification, signal switching, and signal stability.

In home appliances and motors, the BC32725BU is used to control the current flow in order to achieve the desired output voltage, while in industrial process control, it is used to switch the signals, helping to maintain a safe and reliable environment. In signal transmission and signal amplification, the BC32725BU is used to amplify the signal to higher frequencies for further transmission.

Conclusion

The BC32725BU is a single bipolar junction transistor (BJT) commonly used in a wide range of applications, from home appliances to industrial process control. It is designed to switch or amplify electrical signals, and has a high maximum frequency of up to 1MHz. The BC32725BU works on the principle of biasing, and when a small signal is applied to the base of the BJT, it creates a variation in the depletion region, leading to a variation in current from collector to emitter. This makes the BC32725BU ideal for signal amplification and switching applications.

The specific data is subject to PDF, and the above content is for reference

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