BC328TAR Allicdata Electronics
Allicdata Part #:

BC328TAR-ND

Manufacturer Part#:

BC328TAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 25V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 25V 800mA 100MHz 625m...
DataSheet: BC328TAR datasheetBC328TAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC328
Description

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BC328TAR is a type of single bipolar junction transistor (BJT). It is typically used in low-noise amplifiers and general-purpose switching applications. This type of transistor is widely used in electronic circuits including microcontrollers, amplifiers, and logic gates. As with all BJTs, it relies upon the movement of electrons in order to function.

The BC328TAR is a NPN transistor, meaning that it consists of three layers – the base layer, the emitter layer, and the collector layer – which are arranged in order to produce a negative-positive-negative (NPN) structure. The base layer is the most important layer in the transistor as it acts as a control node. When a voltage is applied to the base, it causes electrons to be drawn into the base from the emitter and from the collector. This flow of electrons allows the current to be carried from the collector to the emitter.

The current that flows from the collector to the emitter, or the collector current (Ic), is determined by the ratio of the collector-emitter voltage (Vce) to the collector resistance (Rc). This ratio is known as the transistor gain (hFE), which can be manipulated to control the amount of current that flows through the transistor. By changing the collector-emitter voltage, the gain of the transistor can be adjusted in order to achieve the desired current level.

The main application of the BC328TAR is in low-noise amplifiers. These amplifiers require a high gain, low noise ratio in order to achieve accurate audio reproduction. By using the BC328TAR, the gain of the amplifier can be adjusted in order to achieve the desired results.

The BC328TAR is also commonly used as a general-purpose switching device, as it can be used to reliably switch on and off electronic devices. The silicon substrate of the transistor acts as a gate, allowing current to flow when a positive voltage is applied to it. This makes the BC328TAR a reliable choice for switching applications.

In conclusion, the BC328TAR is a versatile single bipolar junction transistor. It is commonly used in low-noise amplifiers, logic gates, and general-purpose switching applications. The overall gain of the transistor can be adjusted in order to achieve different levels of current, making it a reliable choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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