BC32740BU Allicdata Electronics
Allicdata Part #:

BC32740BUFS-ND

Manufacturer Part#:

BC32740BU

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 625m...
DataSheet: BC32740BU datasheetBC32740BU Datasheet/PDF
Quantity: 4729
1 +: $ 0.18900
10 +: $ 0.15435
100 +: $ 0.08184
500 +: $ 0.05383
1000 +: $ 0.03660
Stock 4729Can Ship Immediately
$ 0.21
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC327
Description

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BC32740BU is a bipolar junction transistor (BJT) designed for use in a variety of applications. It is a single transistor which utilizes a collector, base, and emitter configuration to achieve its purpose. This device is a NPN Silicon planar type which is capable of providing high current capacity and negligible saturation voltages. Using an innovative technology, the BC32740BU can be used for switching and amplifying signals due to its wide range of applications such as general purpose switching, amplify instructions, and amplification of radio signals.

The BC32740BU operates with a collector-base voltage (VCE) of up to 65V allowing for efficient switching even at higher voltages, and design parameters such as hFE and I(CBO) output capability are optimized to meet or exceed the maximum requirements of any given application. This includes fine-tuning of base-emitter voltage (VBE), current gain (hFE), and collector-emitter saturation voltage (VCE(sat)).

The functioning of the BC32740BU is based on BJT operation principles. When the device is turned on and bias voltage is applied, current flows from the collector to base and then from the base to the emitter, creating a flow of electrons from the emitter to the collector. This phenomenon is known as minority carrier injection and it is responsible for creating a voltage gain in the transistor. In the case of the BC32740BU, the high current gain (hFE) allows it to amplify and switch the signal, achieving a high signal fidelity with minimal distortion.

The BC32740BU is ideal for use in applications where signal fidelity, high current, and low power consumption are important. Examples include components in consumer electronic devices such as audio amplifiers, video recorders and player, television sets, and video gaming consoles. Furthermore, this device can also be used in power control, solenoid valve control, and switching applications where high efficiency, high current capacity, and long-term reliability are essential.

In summary, the BC32740BU is a single-transistor BJT designed for a variety of applications. Its innovative design allows for higher current capacity and negligible saturation voltages which makes it ideal for consumer electronics and a variety of power control, solenoid valve control, and switching applications. This device contains an optimized hFE, I(CBO), and VBE for efficient operation, and utilizes the principle of minority carrier injection to achieve a high signal fidelity with minimal distortion.

The specific data is subject to PDF, and the above content is for reference

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