Allicdata Part #: | BC807K-16R-ND |
Manufacturer Part#: |
BC807K-16R |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BC807K-16/SOT23/TO-236AB |
More Detail: | Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW... |
DataSheet: | BC807K-16R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02362 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 250mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
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BC807K-16R application field and working principle
BC807K-16R is an NPN general-purpose small signal transistor developed and manufactured by NXP. It is one of the most widely used Transistors – Bipolar (BJT) – Single. It has a wide variety of applications such as interfacing and amplifying AC, DC, audio and other type of signals. It is also used as a low power switching device in many electronic circuits.
BC807K-16R is a lead free device and has the following characteristics:
- Packaging Style: SOT-23
- Transistor Type: NPN
- Current – Collector (Ic) (Max): 200mA
- Voltage – Collector Emitter Breakdown (Max): 40V
- Power – Maximum (Pm): 600mW
- Transition Frequency (fT): 300MHz
It has a very low saturation voltage rating which makes it well-suited for low-voltage applications. Also, it has very good thermal and current gain characteristics which make it suitable for use in high frequency and high temperature applications.
In terms of its working principle, BC807K-16R is a bipolar junction transistor (BJT). BJTs are three-terminal devices used in electronic circuits as a switch, current amplifier, voltage amplifier, differential amplifier or oscillator. In an NPN BJT, there are two p-type layers and one n-type layer. When current flows through the p-type layers, it creates a junction between the p-type and n-type layers, which allows for the flow of electrons from the n-type to the p-type layer. This is referred to as forward biasing. When the current is increased, the flow of electrons becomes greater and the voltage drop across the base-emitter junction (VBE) is decreased – this is known as saturation.
The BC807K-16R is typically used in low-voltage and low-power applications. It is ideal for use in amplifier circuits, motor control circuits, audio circuits, voltage regulators, switching circuits and many other applications. It is suitable for use in hostile environments such as automotive electronics, as its robust construction and low power dissipation allow it to withstand harsh conditions.
In conclusion, the BC807K-16R is a reliable and robust Transistors – Bipolar (BJT) – Single that is suitable for a wide range of applications. Its low saturation voltage rating makes it a great choice for low voltage and low power circuits. With its robust construction and good thermal and current gain characteristics it is a suitable option for use in hostile environments.
The specific data is subject to PDF, and the above content is for reference
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