BC808-40LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BC808

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BC808-40LT1G transistors are a type of versatile single Bipolar Junction Transistor with a variety of potential applications. BC808-40LT1G transistors belong to a family of closely-related discrete transistors known collectively as PNP bipolar junction transistors. They are one of the most commonly used transistors in electronic circuits, having a wide range of amplifying and switching applications. These transistors can be used to switch AC or DC power in small loads, as well as to control high power loads with a lower power control signal. They are also commonly used in logic circuits to perform basic logic operations, and can be used in analog circuit applications such as amplifying high-frequency signals.The BC808-40LT1G transistor is an NPN type transistor, and its name derives from the respective collector, base, and emitter of the terminals. The transistor has a maximum collector current of 800 mA, a maximum collector-emitter saturation voltage of 0.2V, and a maximum power dissipation of 1 watt. Additionally, the transistor has a gain of 40, with a higher gain meaning that it can better amplify small signals. The internal structure of BC808-40LT1G transistors consists of three regions of differently doped semiconductor material. These regions form a junction between the collector and base and a second junction between the base and the emitter. In NPN transistors, the collector and the emitter are connected via a thin layer of P-type semiconductor material, while the base is connected to the collector region via a thin N-type material.In working, current flowing from the collector to the emitter through the base of the BC808-40LT1G transistor activates the BE junction and current flows from the emitter to the collector. This in turn increases the output voltage applied to the collector. In this way, the transistor amplifies or switches the small base current into a much larger collector current.The BC808-40LT1G transistor is a great choice for use in both low-power and high-power applications. Since they have a low base current, they are ideal for use in low-power circuits such as amplifiers, logic circuits and switches. Additionally, with their high gain and saturable current capability, they can also be used in high-power circuits to control heavy loads such as electric motors and solenoids.These transistors are also relatively easy to use, and they are available in many housings and packages to fit various circuit boards.Overall, BC808-40LT1G transistors are an excellent choice for a variety of circuits and applications. They are versatile, have a high gain and a wide range of potential applications. With their low power requirements and wide range of packages, BC808-40LT1G transistors are an excellent choice for all your transistor needs.

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