BC807DS,115

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The BC807DS,115 belongs to a family of transistors known as the Bipolar Junction Transistor (BJT) Arrays. The BC807DS,115 is a monolithic integrated circuit that consists of four NPN transistors in a single package. The four NPN transistors are arranged in a Darlington configuration and are designed for medium power applications.

The BC807DS,115 provides an operating voltage of 45V, with a maximum power dissipation of 800mW, and it has a Collector-Emitter breakdown voltage of 80V. It has a Low collector-emitter saturation voltage, typically 0.2V (max) @ 5mA, and a high current gain, typically 2000 @ 5mA. It also has a very high input impedance and low output impedance.

The BC807DS,115 is ideal for a variety of general purpose applications such as switching transistors, preamplifiers, power supply regulators and power amplifiers. It is widely used in automotive and industrial electronics as well as in audio/video products. It is also well suited for driving motors and high current lamps, in addition to its use in amplifiers and switch-mode power supplies.

The working principle of the BC807DS,115 is based on the principle of current amplification through an active medium. The transistor is essentially a three terminal device with a Base, a Collector and an Emitter. The device works on the principle that when a small current applied to the Base, produces a much larger current flow from the Collector to the Emitter. This current can be used to perform many different functions such as amplifying signals or switching on and off electronic circuits.

The BC807DS,115 is designed to be used in a Darlington configuration which provides a way to increase the gain of a single stage amplifier. It works by coupling two transistors together in series, with the Collector of the first transistor connected to the Base of the second transistor. This configuration results in a very high current gain, typically in the range of 2000. The Darlington configuration also provides very low output impedance and very low noise operation.

The BC807DS,115 is well suited for use in a wide range of different electronic applications due to its combination of high current gain, low saturation voltage and robust construction. Additionally, the integrated design of the BC807DS,115 means it can be mounted and soldered directly onto a printed circuit board without any external components. This makes it easy to incorporate into a wide range of different electronic applications.

In conclusion, the BC807DS,115 is a efficient four NPN transistor array devices specifically designed for medium power applications. It has a high current gain, low saturation voltage and robust construction, making it ideal for a variety of applications which require high current amplification, such as amplifiers and switch-mode power supplies. The integrated design of the BC807DS,115 makes it easy to mount and solders directly onto a printed circuit board, granting its users great flexibility when deciding on system designs.

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